SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-3 of 3 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
Authors:  Chen YH;  Jin P;  Liang LY;  Ye XL;  Wang ZG;  Martinez AI;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(729Kb)  |  Favorite  |  View/Download:894/246  |  Submit date:2010/04/11
Scanning-tunneling-microscopy  Anisotropy Spectroscopy  Growth  Gaas  Surfaces  Alas  
Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 9, 页码: 1974-1977
Authors:  Lei W;  Chen YH;  Xu B;  Ye XL;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ahleiwen@red.semi.ac.cn
Adobe PDF(272Kb)  |  Favorite  |  View/Download:719/243  |  Submit date:2010/03/17
Vibrational Properties  
Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 12, 页码: 2775-2778
Authors:  Jin P;  Ye XL;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: penjin@red.semi.ac.cn
Adobe PDF(291Kb)  |  Favorite  |  View/Download:700/208  |  Submit date:2010/04/11
Gaas