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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 10, 页码: Art.No.103118
Authors:  Lei W;  Wang YL;  Chen YH;  Jin P;  Ye XL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wen.lei@uni-due.de
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Inas Quantum Dots  
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:  Lei W;  Chen YH;  Jin P;  Ye XL;  Wang YL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Vertical Self-organization  Quantum Wires  Surface  Growth  Alloy  Inalas/inp(001)  Nanowires  Inp(001)  Islands  Arrays  
High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001) 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 12, 页码: Art.No.123104
Authors:  Wang YL;  Jin P;  Ye XL;  Zhang CL;  Shi GX;  Li RY;  Chen YH;  Wang ZG;  Wang, YL, Beijing Tongmei Xtal Technol Co Ltd, Dept Res & Dev, Beijing Tongzhou Ind Dev Zone, Beijing 101113, Peoples R China. E-mail: wangyli@red.semi.ac.cn
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Nanowires  Threshold  Wells  Inp  
Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 14, 页码: 2791-2793
Authors:  Jin P;  Li CM;  Zhang ZY;  Liu FQ;  Chen YH;  Ye XL;  Xu B;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Electron-hole Alignment