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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy