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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Cathodoluminescence  Mocvd  Algan  
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 2, 页码: 414-418
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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V/iii Ratio  
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 1, 页码: 72-75
Authors:  Zhao DG;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Growth Rate  Parasitic Reaction  Mocvd  Aln  Gas-phase Reactions  Movpe Growth  Algan Movpe  Alxga1-xn  
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321
Authors:  Zhang BS;  Wu M;  Liu JP;  Chen J;  Zhu JJ;  Shen XM;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Boyd AR;  Zhang, BS, Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Weixing Rd 7083, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com
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X-ray Diffraction  
Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 331-335
Authors:  Wu M;  Zhang BS;  Chen J;  Liu JP;  Shen XM;  Zhao DG;  Zhang JC;  Wang JF;  Li N;  Jin RQ;  Zhu JJ;  Yang H;  Wu, M, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Full-width At Half-maximum  
The influence of AlN buffer layer thickness on the properties of GaN epilayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 1-2, 页码: 24-29
Authors:  Zhang JC;  Zhao DG;  Wang JF;  Wang YT;  Chen J;  Liu JP;  Yang H;  Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn
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Buffer Layer  
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
Authors:  Zhang BS;  Wu M;  Shen XM;  Chen J;  Zhu JJ;  Liu JP;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Metalorganic Chemical Vapor Deposition  Nitrides  Semiconductor Iii-v Materials  Molecular-beam Epitaxy  High-quality Gan  Chemical-vapor-deposition  Intermediate Layer  Alas  Aln  Surfaces  Silicon  Films  
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Metalorganic Vapor Phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Buffer Layer  Gan  Growth  
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:  Feng G;  Zheng XH;  Fu Y;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Etching  Metalorganic Vapor-phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Light-emitting-diodes  Vapor-phase Epitaxy  Films  Dislocations  Density  Growth  Layers  
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 225, 期号: 1, 页码: 45-49
Authors:  Fu Y;  Yang H;  Zhao DG;  Zheng XH;  Li SF;  Sun YP;  Feng ZH;  Wang YT;  Duan LH;  Fu Y,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Photoluminescence  Sem  Epitaxial Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Cubic Gan  Phase Epitaxy  Selective Growth  Laser-diodes  Layers