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题名作者发表日期▼ 全文
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers [期刊论文]Zhu JH; Zhang SM; Wang H; Zhao DG; Zhu JJ; Liu ZS; Jiang DS; Qiu YX; Yang H2011
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars [期刊论文]Zhu JH; Wang LJ; Zhang SM; Wang H; Zhao DG; Zhu JJ; Liu ZS; Jiang DS; Yang H2011
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition [期刊论文]Deng Y; Zhao DG; Le LC; Jiang DS; Wu LL; Zhu JJ; Wang H; Liu ZS; Zhang SM; Yang H; Liang JW2011
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells [期刊论文]Zhao DG; Jiang DS; Zhu JJ; Wang H; Liu ZS; Zhang SM; Wang YT; Jia QJ; Yang H2010
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices [期刊论文]Wang LJ; Zhang SM; Zhu JH; Zhu JJ; Zhao DG; Liu ZS; Jiang DS; Wang YT; Yang H2010
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector [期刊论文]Zhao DG; Jiang DS; Zhu JJ; Wang; H; Liu ZS; Zhang SM; Yang H2010
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers [期刊论文]Jahn U; Brandt O; Luna E; Sun X; Wang H; Jiang DS; Bian LF; Yang; H2010
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector [期刊论文]Deng Y; Zhao DG; Wu LL; Liu ZS; Zhu JJ; Jiang DS; Zhang SM; Liang JW2010
Light-splitting photovoltaic system utilizing two dual-junction solar cells [期刊论文]Xiong KL; Lu SL; Dong JR; Zhou TF; Jiang DS; Wang RX; Yang H2010
Time delay in InGaN multiple quantum well laser diodes at room temperature [期刊论文]Jin LA; Jiang DS; Zhang ZM; Liu ZS; Zeng C; Zhao DG; Zhu JJ; Wang H; Duan LH; Yang H2010

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