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16-channel VCSEL based multiple chip modules 会议论文
2002 DIGEST OF THE LEOS SUMMER TOPICAL MEETINGS, MT TREMBLANT, CANADA, JUL 15-17, 2002
作者:  Chen HD;  Mao LH;  Tiang J;  Liang K;  Shen RX;  Du Y;  Huang YZ;  Wu RH;  Feng J;  Ke XM;  Liu HY;  Wang ZG;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(146Kb)  |  收藏  |  浏览/下载：1983/366  |  提交时间：2010/10/29
Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang QY;  Tan LW;  Wang J;  Yu YH;  Lin LY;  Wang QY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(754Kb)  |  收藏  |  浏览/下载：1356/211  |  提交时间：2010/11/15
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Cheng BW;  Zhang JG;  Zuo YH;  Mao RW;  Huang CJ;  Luo LP;  Yao F;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(319Kb)  |  收藏  |  浏览/下载：1144/201  |  提交时间：2010/11/15
Si-ge Alloys  Growth  Layers  
Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Chen CY;  Chen WD;  Song SF;  Hsu CC;  Chen CY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(726Kb)  |  收藏  |  浏览/下载：1082/182  |  提交时间：2010/11/15
Hydrogenated Amorphous-silicon  Photoluminescence  Luminescence  Intensity  System  
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Yu JZ;  Huang CJ;  Cheng BW;  Zuo YH;  Luo LP;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1587Kb)  |  收藏  |  浏览/下载：1029/164  |  提交时间：2010/11/15
Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Yang L;  Liu YL;  Li F;  Cheng Y;  Qiu HJ;  Wang QM;  Yang L Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(862Kb)  |  收藏  |  浏览/下载：1045/161  |  提交时间：2010/11/15
Wave-guides  
Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Tan LW;  Wang J;  Wang QY;  Yu YH;  Lin LY;  Tan LW Chinese Acad Sci Inst Semicond Ctr Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(860Kb)  |  收藏  |  浏览/下载：1339/203  |  提交时间：2010/11/15
Epitaxial-growth  Al2o3  Si  
Study on optical band gap of boron-doped nc-Si : H film 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wei WS;  Wang TM;  Zhang CX;  Li GH;  Han HX;  Ding K;  Wei WS Beijing Univ Aeronaut & Astronaut Sch Sci Ctr Mat Phys & Chem Beijing 100083 Peoples R China.
Adobe PDF(860Kb)  |  收藏  |  浏览/下载：1038/213  |  提交时间：2010/11/15
Amorphous-silicon  
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(1208Kb)  |  收藏  |  浏览/下载：1157/174  |  提交时间：2010/11/15
Inp(001)  Epitaxy  Gaas  
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Zhao YW;  Sun NF;  Dong HW;  Jiao JH;  Zhao JQ;  Sun TN;  Lin LY;  Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1581/289  |  提交时间：2010/11/15
Indium Phosphide  Semi-insulating  Annealing  Picts  Photoluminescence  Semiinsulating Inp  Indium-phosphide  Fe  Photoluminescence  Temperature