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Low-energy exciton states in a ZnO cylindrical nanodisk 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 9, 页码: Art. No. 094310
Authors:  Xiong, W;  Li, SS;  Xiong, W, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wenxiong@semi.ac.cn
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Confinement  Nanostructures  
Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 7, 页码: Art. No. 073712
Authors:  Gao FB;  Chen NF;  Zhang XW;  Wang Y;  Liu L;  Yin ZG;  Wu JL;  Gao, FB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fbgao@semi.ac.cn
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Molecular-beam Epitaxy  
Abnormal ferroelectric response and enhancement of piezoelectricity of PbTiO3 under uniaxial compression 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 8, 页码: Art. No. 083713
Authors:  Duan YF;  Li JB;  Li SS;  Xia JB;  Chen CQ;  Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jbli@semi.ac.cn;  cchen@mail.xjtu.edu.cn
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Functional Perturbation-theory  
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 8, 页码: Art. No. 084307
Authors:  Xu, Q;  Li, JB;  Li, SS;  Xia, JB;  Xu, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jbli@semi.ac.cn
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Exchange Interaction  Semiconductors  Gaas  Energies  Dots  Mn  
First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 7, 页码: Art. No. 073527
Authors:  Shi, LJ;  Fang, ZJ;  Li, JB;  Shi, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jbli@semi.ac.cn
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Augmented-wave Method  Delafossite Structure  Electronic-structure  v Semiconductors  Thin-films  Ii-vi  Cusco2  Cualo2  Energy  Cuyo2  
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 8, 页码: Art. No. 083121
Authors:  Liu, HY;  Meng, ZM;  Dai, QF;  Wu, LJ;  Guo, Q;  Hu, W;  Liu, SH;  Lan, S;  Yang, T;  Lan, S, S China Normal Univ, Sch Informat & Optoelect Sci & Technol, Lab Photon Informat Technol, Guangzhou 510006, Guangdong, Peoples R China. 电子邮箱地址: slan@scnu.edu.cn
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Energy Relaxation  Electron Relaxation  Capture  Phonon  Inas  Gaas  Temperature  Dependence  Density  Time  
Spin-dependent transport and spin polarization in coupled quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 6, 页码: Art. No. 064321
Authors:  Liu GH;  Chen YH;  Liu Y;  Jia CH;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Effect Directional Coupler  
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 4, 页码: Art. No. 043516
Authors:  Sun, Q;  Wang, JT;  Wang, H;  Jin, RQ;  Jiang, DS;  Zhu, JJ;  Zhao, DG;  Yang, H;  Zhou, SQ;  Wu, MF;  Smeets, D;  Vantomme, A;  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sunqian519@gmail.com
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Stress  Si(111)  Reduction  Thickness  
Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 1, 页码: Art. No. 013106
Authors:  Zhou, ZY;  Tang, CG;  Chen, YH;  Wang, ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Fine-structure  Quantum-wells  Gaas/alas Superlattices  Semiconductors  Temperature  Hole  
Long-wavelength light emission from self-assembled heterojunction quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 9, 页码: Art. No. 094315
Authors:  Zhou, ZQ;  Xu, YQ;  Hao, RT;  Tang, B;  Ren, ZW;  Niu, ZC;  Xu, YQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yingqxu@semi.ac.cn
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Mu-m  Gaas  Growth  Epitaxy