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Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
Authors:  Zhang Y;  Zeng YP;  Ma L;  Wang BQ;  Zhu ZP;  Wang LC;  Yang FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
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Resonant Tunnelling Diode  Inp Substrate  Molecular Beam Epitaxy  High Resolution Transmission Electron Microscope  Current-voltage Characteristics  Intrinsic Bistability  Circuit  
Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 959-962
Authors:  Ma Long;  Huang Yinglong;  Zhang Yang;  Wang Liangchen;  Yang Fuhua;  Zeng Yiping
Adobe PDF(322Kb)  |  Favorite  |  View/Download:906/336  |  Submit date:2010/11/23
Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 397-402
Authors:  Tan P H;  Luo X D;  Ge W K;  Xu Z Y;  Zhang Y;  Mascarenhas A;  Xin H P;  Tu C W
Adobe PDF(443Kb)  |  Favorite  |  View/Download:878/202  |  Submit date:2010/11/23