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Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505
Authors:  Li Deyao;  Huang Yongzhen;  Zhang Shuming;  Zhong Ming;  Ye Xiaojun;  Zhu Jianjun;  Zhao Degang;  Chen Lianghui;  Yang Hui;  Liang Junwu
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Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 419-424
Authors:  Chen Jun;  Wang Jianfeng;  Wang Hui;  Zhao Degang;  Zhu Jianjun;  Zhang Shuming;  Yang Hui
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Measurement of threading dislocation densities in GaN by wet chemical etching 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235
Authors:  Chen J;  Wang JF;  Wang H;  Zhu JJ;  Zhang SM;  Zhao DG;  Jiang DS;  Yang H;  Jahn U;  Ploog KH;  Chen, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: jchen@red.semi.ac.cn
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X-ray-diffraction