SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-9 of 9 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Evolution of InAs nanostructures grown by droplet epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.033112
Authors:  Zhao C;  Chen YH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1061/379  |  Submit date:2010/03/29
Quantum Dots  
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 10, 页码: Art.No.103118
Authors:  Lei W;  Wang YL;  Chen YH;  Jin P;  Ye XL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wen.lei@uni-due.de
Adobe PDF(354Kb)  |  Favorite  |  View/Download:995/241  |  Submit date:2010/03/29
Inas Quantum Dots  
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:  Lei W;  Chen YH;  Jin P;  Ye XL;  Wang YL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(271Kb)  |  Favorite  |  View/Download:963/271  |  Submit date:2010/04/11
Vertical Self-organization  Quantum Wires  Surface  Growth  Alloy  Inalas/inp(001)  Nanowires  Inp(001)  Islands  Arrays  
Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 14, 页码: 2791-2793
Authors:  Jin P;  Li CM;  Zhang ZY;  Liu FQ;  Chen YH;  Ye XL;  Xu B;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
Adobe PDF(105Kb)  |  Favorite  |  View/Download:1464/532  |  Submit date:2010/03/09
Electron-hole Alignment  
Effect of In0.2Ga0.8As and In0.2Al0.8As combination layer on band offsets of InAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 84, 期号: 25, 页码: 5237-5239
Authors:  He J;  Xu B;  Wang ZG;  He, J, Eindhoven Univ Technol, COBRA Interuniv Res Inst, POB 513, NL-5600 NB Eindhoven, Netherlands. 电子邮箱地址: j.he@tue.nl
Adobe PDF(100Kb)  |  Favorite  |  View/Download:752/271  |  Submit date:2010/03/09
1.3 Mu-m  
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 20, 页码: 3769-3771
Authors:  Liu HY;  Sellers IR;  Airey RJ;  Steer MJ;  Houston PA;  Mowbray DJ;  Cockburn J;  Skolnick MS;  Xu B;  Wang ZG;  Liu HY,Univ Sheffield,Dept Elect & Elect Engn,EPSRC,Cent Facil Semicond 3 5,Sheffield S1 3JD,S Yorkshire,England.
Adobe PDF(166Kb)  |  Favorite  |  View/Download:966/308  |  Submit date:2010/08/12
Molecular-beam Epitaxy  High-power  Laser-diodes  Nm  
High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 18, 页码: 2868-2870
Authors:  Liu HY;  Xu B;  Wei YQ;  Ding D;  Qian JJ;  Han Q;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(97Kb)  |  Favorite  |  View/Download:1059/403  |  Submit date:2010/08/12
Temperature-dependence  
Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 76, 期号: 25, 页码: 3741-3743
Authors:  Liu HY;  Zhou W;  Ding D;  Jiang WH;  Xu B;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(248Kb)  |  Favorite  |  View/Download:860/249  |  Submit date:2010/08/12
Visible Photoluminescence  Linewidth  Injection  Emission  Wires  Laser  
Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 1998, 卷号: 72, 期号: 17, 页码: 2123-2125
Authors:  Li HX;  Wu J;  Xu B;  Liang JB;  Wang ZG;  Li HX,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: hxli@red.semi.ac.cn
Adobe PDF(148Kb)  |  Favorite  |  View/Download:772/268  |  Submit date:2010/08/12
Self-organization  Islands  Recombination  Gaas(100)  Surface