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Molecular beam epitaxial growth of AlSb/InAsSb heterostructures 期刊论文
APPLIED SURFACE SCIENCE, 2014, 卷号: 313, 页码: 479-483
Authors:  Zhang, YW;  Zhang, Y;  Guan, M;  Cui, LJ;  Li, YB;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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Improved wavelength coded optical time domain reflectometry based on the optical switch 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 12, 页码: 15111-15117
Authors:  Zhu, NH;  Tong, YW;  Chen, W;  Wang, SL;  Sun, WH;  Liu, JG
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Plasmons in a free-standing nanorod with a two-dimensional parabolic quantum well caused by surface states 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 5, 页码: 57302
Authors:  Song, YF;  Lu, YW;  Wen, W;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 13, 页码: 132105
Authors:  Ji, D;  Liu, B;  Lu, YW;  Liu, GP;  Zhu, QS;  Wang, ZG
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Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction 期刊论文
PHYSICS LETTERS A, 2012, 卷号: 376, 期号: 2012-10-11, 页码: 1067-1071
Authors:  Liu, B;  Lu, YW;  Huang, Y;  Liu, GP;  Zhu, QS;  Wang, ZG
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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 162102
Authors:  Liu, GP;  Wu, J;  Lu, YW;  Zhao, GJ;  Gu, CY;  Liu, CB;  Sang, L;  Yang, SY;  Liu, XL;  Zhu, QS;  Wang, ZG
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Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates 期刊论文
APPLIED SURFACE SCIENCE, 2012, 卷号: 258, 期号: 17, 页码: 6571-6575
Authors:  Li, YB;  Zhang, Y;  Zhang, YW;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Authors:  Liu GP (Liu Guipeng);  Wu J (Wu Ju);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Li CM (Li Chengming);  Sang L (Sang Ling);  Song YF (Song Yafeng);  Shi K (Shi Kai);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo)
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Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 2, 页码: 23705
Authors:  Liu GP;  Wu J;  Lu YW;  Li ZW;  Song YF;  Li CM;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Liu, GP (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China,;
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Field-effect Transistors  Interface Roughness  Quantum-wells  Mobility  Heterojunction  Transport  Model  
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083112
Authors:  Song YF (Song Yafeng);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Xu XQ (Xu Xiaoqing);  Wang J (Wang Jun);  Guo Y (Guo Yan);  Shi K (Shi Kai);  Li ZW (Li Zhiwei);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Song, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Optical Phonon Energy  Inversion-layers  Transitions  Relaxation  Lasers  States