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Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2, 页码: 026801
Authors:  Wang, JX;  Wang, LS;  Yang, SY;  Li, HJ;  Zhao, GJ;  Zhang, H;  Wei, HY;  Jiao, CM;  Zhu, QS;  Wang, ZG
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Significant quality improvement of GaN on Si upon formation of an AlN defective layer 期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Zhang, H;  Kong, SS;  Zhao, GJ;  Liu, XL
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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Authors:  Zhu, JJ;  Fan, YM;  Zhang, H;  Lu, GJ;  Wang, H;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Zhang, SM;  Chen, GF;  Zhang, BS;  Yang, H
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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 2, 页码: Art. No. 026804
Authors:  Lu GJ (Lu Guo-Jun);  Zhu JJ (Zhu Jian-Jun);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition  Al1-xinxn  Gradual Variation In Composition  Optical Reflectance Spectra  X-ray-diffraction  Phase Epitaxy  Relaxation  Films  Heterostructures  Separation  Dynamics  Alloys  Region  Layers  
Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文
APPLIED PHYSICS EXPRESS, 2010, 卷号: 3, 期号: 7, 页码: Art. No. 072001
Authors:  Huang ZL (Huang Zengli);  Wang JF (Wang Jianfeng);  Liu ZH (Liu Zhenghui);  Xu K (Xu Ke);  Yang H (Yang Hui);  Cao B (Cao Bing);  Han Q (Han Qin);  Zhang GJ (Zhang Guiju);  Wang CH (Wang Chinhua);  Wang, JF, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: jfwang2006@sinano.ac.cn
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Light-emitting-diodes  
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 9, 页码: Art. No. 094903
Authors:  Li MC;  Qiu YX;  Liu GJ;  Wang YT;  Zhang BS;  Zhao LC;  Li MC Harbin Inst Technol Sch Mat Sci & Engn POB 405 Harbin 150001 Peoples R China. E-mail Address: mcli@hit.edu.cn
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X-ray-diffraction  Molecular-beam-epitaxy  Films  Misfit  
UHV/CVD法生长硅基低位错密度厚锗外延层 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 2, 页码: 315-318
Authors:  周志文;  蔡志猛;  张永;  蔡坤煌;  周笔;  林桂江;  汪建元;  李成;  赖虹凯;  陈松岩;  余金中;  王启明
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Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 2, 页码: Art. No. 025107
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Liu W;  Lu GJ;  Liu WB;  Zhang LQ;  Liu ZS;  Zhao DG;  Zhang SM;  Jiang DS;  Yang H;  Ali, A, Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址: akbar@qau.edu.pk
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Luminescence  
Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: abdulmajid40@yahoo.com
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Raman-scattering  
Passively Q-switched Nd : GdVO4 laser with In0.25Ga0.75As being an output coupler 期刊论文
OPTICS AND LASER TECHNOLOGY, 2007, 卷号: 39, 期号: 5, 页码: 1094-1097
Authors:  Zhang BY (Zhang Bingyuan);  Li G (Li Gang);  Chen M (Chen Meng);  Wang GJ (Wang Guoju);  Wang YG (Wang Yonggang);  Zhang, BY, Beijing Univ Technol, Coll Laser Engn, Beijing 100022, Peoples R China. 电子邮箱地址: bingyuanzhang@yahoo.com
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Diode-end-pumped