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Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode 期刊论文
Journal Of Materials Chemistry C, 2018, 卷号: 6, 期号: 43, 页码: 11673-11678
Authors:  Yujue Yang;  Nengjie Huo;  Jingbo Li
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Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 3, 页码: 035705
Authors:  Yujue Yang;  Yiping Zeng
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Advantages of InGaN Light Emitting Diodes With Alternating Quantum Barriers 期刊论文
Journal of Display Technology, 2015, 卷号: 11, 期号: 5, 页码: 456-460
Authors:  Yujue Yang;  Lian Zhang;  Tongbo Wei;  Yiping Zeng
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Efficiency Droop Reduction in InGaN LEDs by Alternating AlGaN Barriers With GaN Barriers 期刊论文
Ieee Photonics Technology Letters, 2015, 卷号: 27, 期号: 8, 页码: 844-847
Authors:  Yujue Yang;  Yiping Zeng
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Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2015, 卷号: 212, 期号: 8, 页码: 1805-1809
Authors:  Yujue Yang;  Yiping Zeng
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GaN基LED结构设计和理论模拟及载流子局域化实验研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  杨玉珏
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Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes 期刊论文
JOURNAL OF LUMINESCENCE, 2014, 卷号: 155, 页码: 238-243
Authors:  Yang, Yujue;  Ma, Ping;  Wei, Xuecheng;  Yan, Dan;  Wang, Yafang;  Zeng, Yiping
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