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Recent progress in diamond-based MOSFETs 期刊论文
International Journal of Minerals, Metallurgy, and Materials, 2019, 卷号: 26, 期号: 10, 页码: 1195-1205
Authors:  Xiao-lu Yuan;  Yu-ting Zheng;  Xiao-hua Zhu;  Jin-long Liu;  Jiang-wei Liu;  Cheng-ming Li;  Peng Jin;  Zhan-guo Wang
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Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices 期刊论文
Journal of Materials Science: Materials in Electronics, 2019, 卷号: 30, 期号: 4, 页码: 3277-3282
Authors:  Gaoqiang Deng;   Yuantao Zhang;   Pengchong Li ;   Ye Yu ;   Xu Han ;   Liang Chen ;   Long Yan ;   Xin Dong ;  Degang Zhao;  Guotong Du
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Control of magnetic anisotropy in epitaxial Co 2 MnAl thin films through piezo-voltage-induced strain 期刊论文
Journal of Applied Physics, 2019, 卷号: 125, 页码: 082503
Authors:  Bao Zhang;   Hai-Long Wang;   Jin Cao;   Yu-Cai Li;   Mei-Yin Yang;   Ke Xia;   Jian-Hua Zhao;   Kai-You Wang
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Recent progress in diamond-based MOSFETs 期刊论文
International Journal of Minerals, Metallurgy, and Materials, 2019, 卷号: 26, 期号: 10, 页码: 1195-1205
Authors:  Xiao-lu Yuan;  Yu-ting Zheng;  Xiao-hua Zhu;  Jin-long Liu;  Jiang-wei Liu;  Cheng-ming Li;  Peng Jin;  Zhan-guo Wang
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Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate 期刊论文
Superlattices and Microstructures, 2018, 卷号: 116, 页码: 1-8
Authors:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Long Yan ;   Pengchong Li ;   Xu Han ;   Liang Chen ;   Degang Zhao ;   Guotong Du
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Growth of AlGaN-based multiple quantum wells on SiC substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 9, 页码: 7756-7762
Authors:  Xu Han;   Yuantao Zhang;   Pengchong Li ;   Long Yan ;   Gaoqiang Deng ;   Liang Chen ;   Ye Yu ;   Degang Zhao ;   Jingzhi Yin
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Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 74-79
Authors:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Zhen Huang ;   Xu Han ;   Liang Chen ;   Long Yan ;   Pengchong Li ;   Xin Dong ;   Degang Zhao ;   Guotong Du
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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 15, 页码: 151607
Authors:  Gaoqiang Deng;   Yuantao Zhang;   Ye Yu;   Long Yan;   Pengchong Li;   Xu Han;   Liang Chen;   Degang Zhao;   Guotong Du
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Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9321-9325
Authors:  Gaoqiang Deng;  Yuantao Zhang;  Ye Yu;  Long Yan;  Pengchong Li;  Xu Han;  Liang Chen;  Degang Zhao;  Guotong Du
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The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
Authors:  Gaoqiang Deng;  Yuantao Zhang;  Zhen Huang;  Long Yan;  Pengchong Li;  Xu Han;  Ye Yu;  Liang Chen;  Degang Zhaoand Guotong Du
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