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| Interface-driven unusual anomalous Hall effect in Mn x Ga/Pt bilayers 期刊论文 PHYSICAL REVIEW B, 2019, 卷号: 100, 页码: 184410 Authors: K. K. Meng ; L. J. Zhu; Z. H. Jin; E. K. Liu; X. P. Zhao; I. A. Malik; Z. G. Fu; Y. Wu; J. Miao; X. G. Xu; J. X. Zhang; J. H. Zhao; Y. Jiang
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| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG
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| A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文 ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31 Authors: X. F. Liu; z G. G. Yan; Z. W. Shen; Z. X.Wen; L. X. Tian; W. S. Zhao; L. Wang; M. Guan; F. Zhang; G. S. Sun; Y. P. Zeng
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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文 Scientific Reports, 2017, 卷号: 7, 页码: 44850 Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; W. Liu; X. Li; F. Liang; S. T. Liu; L. Q. Zhang; H. Yang
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| Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文 OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602 Authors: J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG; P. CHEN; J. J. ZHU; Z. S. LIU; S. T. LIU; L. Q. ZHANG; M. LI
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| 半导体激光器光纤耦合输出光斑均匀性的研究 期刊论文 半导体光电, 2016, 卷号: 36, 期号: 6, 页码: 914-917 Authors: 井红旗; 王翠鸾; 吴霞; 赵懿昊; 王鑫; 林楠; 仲莉; 刘素平; 马骁宇
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| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 Applied Physics A, 2016, 卷号: 122, 期号: 9 Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
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| The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文 physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228 Authors: X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang
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| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文 Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011206 Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
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| Tunable bandgap in hybrid perovskite CH3NH3Pb(Br3−yXy) single crystals and photodetector applications 期刊论文 AIP Advances, 2016, 卷号: 6, 期号: 4, 页码: 045115 Authors: L. Wang; G. D. Yuan; R. F. Duan; F. Huang; T. B. Wei; Z. Q. Liu; J. X. Wang; J. M. Li
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