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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 4, 页码: 045604
Authors:  Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells 期刊论文
Chinese Physics Letters, 2019, 卷号: 36, 期号: 7, 页码: 077201
Authors:  Xiao-di Xue ;   Yu Liu ;   Lai-pan Zhu ;   Wei Huang ;   Yang Zhang ;   Xiao-lin Zeng ;   Jing Wu ;   Bo Xu ;   Zhan-guo Wang ;   Yong-hai Chen ;   Wei-feng Zhang
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Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 5, 页码: 698-701
Authors:  Weijiang Ni ;   Xiaoliang Wang ;   Miaolin Xu;   Quan Wang ;   Chun Feng;   Honglin Xiao;   Lijuan Jiang;   Wei Li
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Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co 2 MnAl 期刊论文
Chinese Physics Letters, 2019, 卷号: 36, 期号: 6, 页码: 067502
Authors:  Zhi-Feng Yu ;   Jun Lu ;   Hai-Long Wang ;   Xu-Peng Zhao ;   Da-Hai Wei ;   Jia-Lin Ma ;   Si-Wei Mao ;   Jian-Hua Zhao
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Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504
Authors:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
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Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells 期刊论文
Materials Research Express, 2019, 卷号: 6, 页码: 076203
Authors:  Wei Liu ;  Feng Liang ;  Degang Zhao ;  Jing Yang ;  Desheng Jiang ;  Jianjun Zhu ;   Zongshun Liu
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Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission 期刊论文
Journal of Applied Physics, 2019, 卷号: 126, 页码: 245702
Authors:  Kangkai Tian;   Chunshuang Chu;   Jiamang Che;   Hua Shao;   Jianquan Kou;   Yonghui Zhang;   Xingye Zhou;   Zhihong Feng;   Tongbo Wei ;   Zi-Hui Zhang
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Asymmetry Analysis of the Resonance Curve in Resonant Integrated Optical Gyroscopes 期刊论文
Sensors, 2019, 卷号: 19, 页码: 3305
Authors:  Yu Ming He;   Fu Hua Yang ;   Wei Yan ;   Wei Hua Han;   Zhao Feng Li
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The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Wei Liu ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang ;   Wenjie Wang ;   Mo Li ;   Yuantao Zhang ;   Guotong Du
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Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 4, 页码: 1503107
Authors:  Jing Yang;  Degang Zhao;  Zongshum Liu;  De-Sheng Jiang;  Jianjun Zhu;  Ping Chen;  Feng Liang;  S. T. Liu;  Wei Liu;  Yao Xing;  Mo Li
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