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Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling 期刊论文
NATURE COMMUNICATIONS, 2014, 卷号: 5, 页码: 3252
Authors:  Tongay, S;  Sahin, H;  Ko, C;  Luce, A;  Fan, W;  Liu, K;  Zhou, J;  Huang, YS;  Ho, CH;  Yan, JY;  Ogletree, DF;  Aloni, S;  Ji, J;  Li, SS;  Li, JB;  Peeters, FM;  Wu, JQ
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Two-dimensional semiconductor alloys: Monolayer Mo1-xWxSe2 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 1, 页码: 012101
Authors:  Tongay, S;  Narang, DS;  Kang, J;  Fan, W;  Ko, CH;  Luce, AV;  Wang, KX;  Suh, J;  Patel, KD;  Pathak, VM;  Li, JB;  Wu, JQ
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High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 5442
Authors:  Yang, SX;  Tongay, S;  Yue, Q;  Li, YT;  Li, B;  Lu, FY
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Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors 期刊论文
NANOSCALE, 2014, 卷号: 6, 期号: 13, 页码: 7226-7231
Authors:  Yang, SX;  Tongay, S;  Li, Y;  Yue, Q;  Xia, JB;  Li, SS;  Li, JB;  Wei, SH
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Formation and stability of point defects in monolayer rhenium disulfide 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 89, 期号: 15, 页码: 155433
Authors:  Horzum, S;  Cakir, D;  Suh, J;  Tongay, S;  Huang, YS;  Ho, CH;  Wu, J;  Sahin, H;  Peeters, FM
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Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers 期刊论文
NANO LETTERS, 2014, 卷号: 14, 期号: 6, 页码: 3185-3190
Authors:  Tongay, S;  Fan, W;  Kang, J;  Park, J;  Koldemir, U;  Suh, J;  Narang, DS;  Liu, K;  Ji, J;  Li, JB;  Sinclair, R;  Wu, JQ
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Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating 期刊论文
Nano Letters, 2013, 卷号: 13, 期号: 6, 页码: 2831-2836
Authors:  Tongay, Sefaattin;  Zhou, Jian;  Ataca, Can;  Liu, Jonathan;  Kang, Jeong Seuk;  Matthews, Tyler S.;  You, Long;  Li, Jingbo;  Grossman, Jeffrey C.;  Wu, Junqiao
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Anomalous Raman spectra and thickness-dependent electronic properties of WSe2 期刊论文
PHYSICAL REVIEW B, 2013, 卷号: 87, 期号: 16, 页码: 165409
Authors:  Sahin, H.;  Tongay, S.;  Horzum, S.;  Fan, W.;  Zhou, J.;  Li, J.;  Wu, J.;  Peeters, F. M.
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Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2 期刊论文
NANO LETTERS, 2012, 卷号: 12, 期号: 11, 页码: 5576-5580
Authors:  Tongay S (Tongay, Sefaattin);  Zhou J (Zhou, Jian);  Ataca C (Ataca, Can);  Lo K (Lo, Kelvin);  Matthews TS (Matthews, Tyler S.);  Li JB (Li, Jingbo);  Grossman JC (Grossman, Jeffrey C.);  Wu JQ (Wu, Junqiao)
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Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2 期刊论文
Nano Letters, 2012, 卷号: 12, 期号: 11, 页码: 5576-5580
Authors:  Tongay, Sefaattin;  Zhou, Jian;  Ataca, Can;  Lo, Kelvin;  Matthews, Tyler S;  Li, Jingbo;  Grossman, Jeffrey C;  Wu, Junqiao
Adobe PDF(2247Kb)  |  Favorite  |  View/Download:757/178  |  Submit date:2013/04/23