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A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944
Authors:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen;  Lixin Tian;  Guoguo Yan;  Xingfang Liu;  Lei Wang;  Wanshun Zhao;  Guosheng Sun;  Yiping Zeng
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4H -SiC 基 SiO 2和 Al 2O3栅介质层的研究 学位论文
, 北京: 中国科学院半导体研究所, 2016
Authors:  田丽欣
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Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface 期刊论文
Applied Surface Science, 2013, 卷号: 280, 页码: 500–503
Authors:  Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng
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Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces 期刊论文
physica status solidi (a), 2013, 卷号: 210, 期号: 11, 页码: 2503–2509
Authors:  Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang
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Atomic Layer Deposition of BiFeO3 Thin Films Using β_ Diketonates and H2O 期刊论文
J. Phys. Chem. C, 2013, 卷号: 117, 页码: 24579–24585
Authors:  Feng Zhang , Guosheng Sun , Wanshun Zhao , Lei Wang , Liu Zheng , Shengbei Liu , Bin Liu , Lin Dong , Xingfang Liu , Guoguo Yan , Lixin Tian , and Yiping Zeng
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Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources 期刊论文
MATERIALS, 2013, 卷号: 6, 期号: 4, 页码: 1543-1553
Authors:  Liu, Xingfang;  Sun, Guosheng;  Liu, Bin;  Yan, Guoguo;  Guan, Min;  Zhang, Yang;  Zhang, Feng;  Chen, Yu;  Dong, Lin;  Zheng, Liu;  Liu, Shengbei;  Tian, Lixin;  Wang, Lei;  Zhao, Wanshun;  Zeng, Yiping
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Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 12, 页码: Art. No. 125412
Authors:  Zhang LX (Zhang Lixin);  Zhou XF (Zhou Xiang-Feng);  Wang HT (Wang Hui-Tian);  Xu JJ (Xu Jing-Jun);  Li JB (Li Jingbo);  Wang EG (Wang E. G.);  Wei SH (Wei Su-Huai);  Zhang, LX, Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China.
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Initio Molecular-dynamics  Electron Gases  Heterostructures  Transition  
沟槽型MOS势垒肖特基二极管及制作方法 专利
专利类型: 发明, 公开日期: 2013-12-11
Inventors:  郑柳;  孙国胜;  张峰;  刘兴昉;  王雷;  赵万顺;  闫果果;  董林;  刘胜北;  刘斌;  田丽欣;  曾一平
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沟槽型MOS势垒肖特基二极管 专利
专利类型: 发明, 公开日期: 2014-02-12
Inventors:  郑柳;  孙国胜;  张峰;  刘兴昉;  王雷;  赵万顺;  闫果果;  董林;  刘胜北;  刘斌;  田丽欣;  曾一平
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一种碳化硅欧姆接触电极及其制作方法 专利
专利类型: 发明, 公开日期: 2016-09-29
Inventors:  刘胜北;  何志;  刘斌;  杨香;  刘兴昉;  张峰;  王雷;  田丽欣;  刘敏;  申占伟;  赵万顺;  樊中朝;  王晓峰;  王晓东;  赵永梅;  杨富华;  孙国胜;  曾一平
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