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Electromagnetic Enhancement of Graphene Raman Spectroscopy by Ordered and Size-Tunable Au Nanostructures 期刊论文
Nanoscale Research Letters, 2015, 卷号: 10, 期号: 1, 页码: 390
Authors:  Shuguang Zhang;  Xingwang Zhang;  Xin Liu
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表面等离激元增强 ZnO 基 LEDs 电致发光研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  张曙光
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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 2, 页码: Article no.23716
Authors:  Ying J;  Zhang XW;  Yin ZG;  Tan HR;  Zhang SG;  Fan YM;  Ying, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
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High-pressure Synthesis  Vapor-deposition  Nucleation  Emission  Diamond  Growth  
Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 102002
Authors:  Tan, Hairen;  You, Jingbi;  Zhang, Shuguang;  Gao, Hongli;  Yin, Zhigang;  Bai, Yiming;  Zhang, Xiulan;  Zhang, Xingwang;  Qu, Sheng;  Tan, H.(hrtan@semi.ac.cn)
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Metallic Films  Plasmons  Silicides  Zinc Oxide  
Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 8, 页码: Art. No. 083701
Authors:  You JB;  Zhang XW;  Zhang SG;  Tan HR;  Ying J;  Yin ZG;  Zhu QS;  Chu PK (Chu Paul K.);  Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn;  paul.chu@cityu.edu.hk
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Light-emitting-diodes  Spectroscopy  Epitaxy  Growth  Film  Sio2  
增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法 专利
专利类型: 发明, 专利号: CN102394263A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  尹志岗;  张曙光;  张兴旺;  董敬敬;  高红丽;  施辉东
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增强ZnO基发光二极管紫光电致发光性能的方法 专利
专利类型: 发明, 专利号: CN102394264A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  张兴旺;  张曙光;  尹志岗;  董敬敬;  高红丽;  施辉东
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图案化纳米模板及其制备方法 专利
专利类型: 发明, 专利号: CN201010520234.0, 公开日期: 2011-08-31
Inventors:  董敬敬;  张兴旺;  尹志岗;  谭海仁;  高云;  张曙光;  白一鸣
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制作ZnO基异质结发光二极管的方法 专利
专利类型: 发明, 专利号: CN201010183370.5, 公开日期: 2011-08-31
Inventors:  张曙光;  尹志岗;  张兴旺;  游经碧
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改善n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能的方法 专利
专利类型: 发明, 专利号: CN102130229A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  张曙光;  张兴旺;  尹志岗;  董敬敬;  游经碧
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