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Effect of localizaiton states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells 期刊论文
Journal of Vacuum Science & Technology A, 2015, 卷号: 33, 期号: 6, 页码: 061502
Authors:  Wei Liu;  De Gang Zhao;  De Sheng Jiang;  Ping Chen;  Zong Shun Liu;  Jian Jun Zhu;  Xiang Li;  Ming Shi;  Dan Mei Zhao;  Jian Ping Liu;  Shu Ming Zhang;  Hui Wang;  Hui Yang
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Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 9, 页码: 098801
Authors:  Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Huia
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Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth 期刊论文
IEEE Photonics Technology Letters, 2013, 卷号: 25, 期号: 24, 页码: 2401-2404
Authors:  Feng, Mei-Xin;  Liu, Jian-Ping;  Zhang, Shu-Ming;  Jiang, De-Sheng;  Li, Zeng-Cheng;  Zhou, Kun;  Li, De-Yao;  Zhang, Li-Qun;  Wang, Feng;  Wang, Hui;  Chen, Ping;  Liu, Zong-Shun;  Zhao, De-Gang;  Sun, Qian;  Yang, Hui
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Thermal analysis of GaN laser diodes in a package structure 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 8, 页码: 084209
Authors:  Feng MX (Feng Mei-Xin);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu JP (Liu Jian-Ping);  Wang H (Wang Hui);  Zeng C (Zeng Chang);  Li ZC (Li Zeng-Cheng);  Wang HB (Wang Huai-Bing);  Wang F (Wang Feng);  Yang H (Yang Hui)
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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 12, 页码: 127306
Authors:  Le LC (Le Ling-Cong);  Zhao DG (Zhao De-Gang);  Wu LL (Wu Liang-Liang);  Deng Y (Deng Yi);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Zhang BS (Zhang Bao-Shun);  Yang H (Yang Hui)
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Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 10, 页码: Art. No. 106802
Authors:  Guo X (Guo Xi);  Wang H (Wang Hui);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
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Ingan  In-plane Grazing Incidence X-ray Diffraction  Reciprocal Space Mapping  Biaxial Strain  Critical Layer Thickness  Optical-properties  Lattice-constants  Gan  Heterostructures  Alloys  Wells  
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
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In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Abnormal photoabsorption in high resistance GaN epilayer 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  Liu WB (Liu Wen-Bao);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wbliu@semi.ac.cn
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Gan  Exciton  Photovoltaic Spectroscopy  Msm  Photoresponsivity  
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 2, 页码: Art. No. 026804
Authors:  Lu GJ (Lu Guo-Jun);  Zhu JJ (Zhu Jian-Jun);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition  Al1-xinxn  Gradual Variation In Composition  Optical Reflectance Spectra  X-ray-diffraction  Phase Epitaxy  Relaxation  Films  Heterostructures  Separation  Dynamics  Alloys  Region  Layers