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Cathodoluminescence study of GaN-based film structures 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 卷号: 19, 页码: S58-S63 Suppl. 1
Authors:  Jiang DS;  Jahn U;  Chen J;  Li DY;  Zhang SM;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Ploog K;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117
Authors:  Wang, XL (Wang, X. L.);  Zhao, DG (Zhao, D. G.);  Jahn, U (Jahn, U.);  Ploog, K (Ploog, K.);  Jiang, DS (Jiang, D. S.);  Yang, H (Yang, H.);  Liang, JW (Liang, J. W.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: WXL@mail.semi.ac.cn
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Photodiodes  
Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 卷号: 19, 期号: 17, 页码: Art.No.176005
Authors:  Wang XL;  Zhao DG;  Jiang DS;  Yang H;  Liang JW;  Jahn U;  Ploog K;  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: WXL@mail.semi.ac.cn
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Sapphire  
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 12, 页码: Art.No.123101
Authors:  Sun, Q (Sun, Q.);  Wang, H (Wang, H.);  Jiang, DS (Jiang, D. S.);  Jin, RQ (Jin, R. Q.);  Huang, Y (Huang, Y.);  Zhang, SM (Zhang, S. M.);  Yang, H (Yang, H.);  Jahn, U (Jahn, U.);  Ploog, KH (Ploog, K. H.);  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Light-emitting-diodes  
可用于器件的侧墙GaAs量子线列阵结构 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 4, 页码: 309
Authors:  牛智川;  周增圻;  潘钟;  吴荣汉;  Noetzel R;  Ploog K
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三角形点结构的MBE生长及其量子阱限制能量的横向变化 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 4, 页码: 311
Authors:  牛智川;  周增圻;  韩勤;  吴荣汉;  Notzel R;  Jahn U;  Ramsteiner M;  Ploog K H
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GaAs均匀点状结构的分子束外延图形生长 期刊论文
物理学报, 1998, 卷号: 47, 期号: 8, 页码: 1346
Authors:  牛智川;  周增圻;  吴荣汉;  封松林;  Noetzel R;  Jahn U;  Ploog K H
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GaInAs/AlInAs调制掺杂结构材料的光学性质研究 期刊论文
固体电子学研究与进展, 1996, 卷号: 16, 期号: 2, 页码: 121
Authors:  江德生;  刘伟;  张耀辉;  张永航;  Ploog K
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A STUDY OF RESONANT RAMAN-SCATTERING IN GAINAS/AIINAS MULTIPLE QUANTUM-WELLS 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 1992, 卷号: 12, 期号: 2, 页码: 273-277
Authors:  JIANG DS;  ZHANG YH;  ABRAHAM C;  SYASSEN K;  XIA JB;  PLOOG K;  JIANG DS CHINESE ACAD SCIINST SEMICONDNATL LAB SUPERLATTICES & MICROSTRUCTURES100083 BEIJINGPEOPLES R CHINA
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Absorption-spectroscopy  Heterostructures  
NEAR-RESONANCE RAMAN-SCATTERING OF LONGITUDINAL OPTICAL PHONON MODES AND INTERFACE MODES IN GAAS/ALAS SUPERLATTICES 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 卷号: 4, 期号: 2, 页码: 367-373
Authors:  WANG ZP;  HAN HX;  LI GH;  JIANG DS;  PLOOG K;  WANG ZP ACAD SINICANATL LAB SUPERLATTICES & MICROSTRUCTPOB 912BEIJING 100083PEOPLES R CHINA
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Gaas-alas Superlattices  Vibrational-modes  Confined Lo