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19μm quantum cascade infrared photodetectors 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 191120 - 191120-4
Authors:  Zhai, Shen-Qiang;  Liu, Jun-Qi;  Wang, Xue-Jiao;  Zhuo, Ning;  Liu, Feng-Qi;  Wang, Zhan-Guo;  Liu, Xi-Hui;  Li, Ning;  Lu, Wei
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Aluminium Compounds  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Infrared Detectors  Leakage Currents  Photodetectors  Photodetectors  Bolometers  Infrared Submillimeter Wave microWave And radioWave Receivers And Detectors  
无权访问的条目 期刊论文
Authors:  Feng Zhang;  Guosheng Sun;  Huolin Huang;  Zhengyun Wu;  Lei Wang;  Wanshun Zhao;  Xingfang Liu;  Guoguo Yan;  Liu Zheng;  Lin Dong;  Yiping Zeng
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Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: Article no.14204
Authors:  Zhao HW;  Hu WX;  Xue CL;  Cheng BW;  Wang QM;  Zhao, HW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. hwzhao@semi.ac.cn
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Silicon  Photodetectors  Si  
Fabrication of high speed parallel12-channel optical receiver module with40 Gbit/s 期刊论文
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2011, 卷号: 22, 期号: 8, 页码: 1187-1189
Authors:  Tang, Jun;  Pei, Wei-Hua;  Lu, Lin;  Liu, Feng-Man;  Chen, Hong-Da;  Tang, J.(junt@semi.ac.cn)
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Acoustic Receivers  Optical Receivers  Optoelectronic Devices  Photodetectors  
Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling 期刊论文
Proceedings of SPIE- The International Society for Optical Engineering, 2011, 卷号: 8308, 页码: 83081Y
Authors:  Huang, Wenchao;  Xia, Hui;  Wang, Shaowei;  Deng, Honghai;  Wei, Peng;  Li, Lu;  Liu, Fengqi;  Li, Zhifeng;  Li, Tianxin;  Huang, W.(wc_huang@mail.sitp.ac.cn)
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Capacitance  Carrier Concentration  Characterization  Diffusion  Optoelectronic Devices  Photodetectors  Scanning  Semiconductor Device Structures  Semiconductor Devices  Semiconductor Quantum Wells  Thermionic Emission  
High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文
IEEE Electron Device Letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Zeng, Yiping;  Zhang, F.(fzhang@semi.ac.cn)
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Integrated Circuits  Metal Insulator Boundaries  Photodetectors  Semiconducting Silicon Compounds  Semiconductor Insulator Boundaries  Silicon Carbide  
Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters 期刊论文
2011 IEEE International Topical Meeting on Microwave Photonics- Jointly Held with the2011 Asia-Pacific Microwave Photonics Conference, MWP/APMP2011, 2011, 页码: 101-104
Authors:  Ding, L.;  Lim, Andy Eu-Jin;  Fang, Qing;  Liow, Tsung-Yang;  Yu, M.B.;  Lo, G.-Q.;  Ding, L.(dingl@ime.a-star.edu.sg)
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Detectors  Electroluminescence  Epitaxial Growth  Germanium  Light  Light Emission  Light Sources  Microwave Filters  Microwaves  Monolithic Integrated Circuits  Optical Frequency Conversion  Photodetectors  Photoluminescence  Photonics  Photons  Semiconducting Silicon Compounds  Silicon  
Frequency drift and instantaneous linewidth broadening of phase-section tuned SG-DBR laser 期刊论文
OPTICS COMMUNICATIONS, 2011, 卷号: 284, 期号: 5, 页码: 1312-1317
Authors:  Ke JH;  Zhu NH;  Xie LA;  Zhao LJ;  Wang LX;  Chen SF;  Liu JG;  Zhang Y;  Wang W;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. nhzhu@semi.ac.cn
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Frequency Drift  Instantaneous Linewidth  Sampled-grating Distributed Bragg Reflector Laser  Semiconductor-lasers  Wavelength  Photodetectors  Performance  Diodes  
InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18504
Authors:  Zuo YH;  Cao QA;  Zhang Y;  Zhang LZ;  Guo JC;  Xue CL;  Cheng BW;  Wang QM;  Zuo, YH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. yhzuo@red.semi.ac.cn
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High Responsivity  Diluted Waveguide  Evanescent Coupling  Waveguide Photodiode  Traveling-carrier Photodiodes  High-power  1.55-mu-m Wavelength  Performance  Photodetectors  Physics  Design  Layer  
High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 卷号: 25, 期号: 7, 页码: Art. No. 075011
Authors:  Liu JQ (Liu Junqi);  Kong N (Kong Ning);  Li L (Li Lu);  Liu FQ (Liu Fengqi);  Wang LJ (Wang Lijun);  Chen JY (Chen Jianyan);  Wang ZG (Wang Zhanguo);  Liu, JQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jqliu@semi.ac.cn
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Well Infrared Photodetectors