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Ultrahigh resolution optic fiber strain sensor with a frequency-locked random distributed feedback fiber laser 期刊论文
Optics Letters, 2018, 卷号: 43, 期号: 11, 页码: 2499-2502
Authors:  PEIDE LIU ;   WENZHU HUANG ;   WENTAO ZHANG ;   FANG LI
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A Fiber Optic Accelerometer–Magnetometer 期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2017, 卷号: 35, 期号: 9, 页码: 1732-1737
Authors:  Zhaogang Wang;  Wentao Zhang;  Wenzhu Huang;  Peide Liu;  Fang Li
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An EMD-SG Algorithm for Spectral Noise Reduction of FBG-FP Static Strain Sensor 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 卷号: 29, 期号: 10, 页码: 814-817
Authors:  Peide Liu;  Wenzhu Huang;  Wentao Zhang;  Fang Li
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Picosecond laser microstructuring for black silicon solar cells 期刊论文
Advanced Materials Research, 2012, 卷号: 418-420, 页码: 217-221
Authors:  Zhu, Xiaoning;  Zhu, Hongliang;  Liu, Dewei;  Huang, Yongguang;  Wang, Xiyuan;  Yu, Haijuan;  Wang, Shuai;  Lin, Xuechun;  Han, Peide
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一种制作白光发光二极管的方法 专利
专利类型: 发明, 申请日期: 2004-02-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈振;  韩培德;  陆大成;  刘祥林;  王晓晖;  朱勤生;  王占国
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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
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Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 266, 期号: 4, 页码: 423-428
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Nanostructure  
一种单/多层异质量子点结构的制作方法 专利
专利类型: 发明, 申请日期: 2003-04-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈振;  陆大成;  韩培德;  刘祥林;  王晓晖;  李昱峰;  王占国
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Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 1, 页码: 316-319
Authors:  Chen Z;  Lu DC;  Liu XL;  Wang XH;  Han PD;  Wang D;  Yuan HR;  Wang ZG;  Li GH;  Fang ZL;  Chen Z,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Mg-doped Gan  Gallium Nitride  Phase Epitaxy  Substrate  Layer  
InGaN量子点的诱导生长和发光特性研究 期刊论文
发光学报, 2003, 卷号: 24, 期号: 4, 页码: 380-384
Authors:  李昱峰;  韩培德;  陈振;  黎大兵;  王占国;  刘祥林;  陆大成;  王晓军;  汪度
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