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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文
MATERIALS, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926
Authors:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan);  Tang J (Tang, Jun);  Liu J (Liu, Jun);  Zhang WD (Zhang, Wendong);  He JF (He, Jifang);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)
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Short-Range Surface Plasmon Polaritons for Extraordinary Low Transmission Through Ultra-Thin Metal Films with Nanopatterns 期刊论文
PLASMONICS, 2012, 卷号: 7, 期号: 1, 页码: 47-52
Authors:  Gan, QQ;  Bai, WL;  Jiang, SH;  Gao, YK;  Li, WD;  Wu, W;  Bartoli, FJ
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First-principles LDA plus U and GGA plus U study of neptunium dioxide 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 4, 页码: Art. No. 045119
Authors:  Wang BT (Wang Bao-Tian);  Shi HL (Shi Hongliang);  Li WD (Li Weidong);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. E-mail Address: zhang_ping@iapcm.ac.cn
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Generalized Gradient Approximation  Structural Stability  Oxides  
Structural, mechanical, thermodynamic, and electronic properties of thorium hydrides from first-principles 期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2010, 卷号: 401, 期号: 1-3, 页码: 124-129
Authors:  Wang BT (Wang Bao-Tian);  Zhang P (Zhang Ping);  Song HZ (Song Hongzhou);  Shi HL (Shi Hongliang);  Li DF (Li Dafang);  Li WD (Li Wei-Dong);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. 电子邮箱地址: zhang_ping@iapcm.ac.cn
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Th4h15  Thh2  
First-principles study of ground-state properties and high pressure behavior of ThO2 期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2010, 卷号: 399, 期号: 2-3, 页码: 181-188
Authors:  Wang BT (Wang Bao-Tian);  Shi HL (Shi Hongliang);  Li WD (Li Wei-Dong);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. 电子邮箱地址: zhang_ping@iapcm.ac.cn
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Elastic Properties  Actinide Dioxides  Thorium-dioxide  Single-crystal  Stability  
Mechanical and chemical bonding properties of ground state BeH2 期刊论文
EUROPEAN PHYSICAL JOURNAL B, 2010, 卷号: 74, 期号: 3, 页码: 303-308
Authors:  Wang BT;  Zhang P;  Shi HL;  Sun B;  Li WD;  Wang, BT, Shanxi Univ, Inst Theoret Phys, Taiyuan 030006, Peoples R China. 电子邮箱地址: zhang_ping@iapcm.ac.cn
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Beryllium Hydride  Ab-initio  Mgh2  
Phosphor-conversion white light using InGaN ultraviolet laser diode 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 2, 页码: Art. No. 021129
Authors:  Xu Y;  Chen LH;  Li YZ;  Song GF;  Wang YP;  Zhuang WD;  Long Z;  Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xuyun@red.semi.ac.cn
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Emitting-diodes  
Anti-Stokes photoluminescence in ZnO microcrystal 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.031902
Authors:  Cao WT (Cao Weitao);  Du WM (Du Weimin);  Su FH (Su Fuhai);  Li GH (Li Guohua);  Cao, WT, Peking Univ, Inst Modern Opt, Sch Phys, Beijing 100871, Peoples R China. E-mail: wd00@pku.edu.cn
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Temperature-dependence  Up-conversion  Zinc-oxide  Luminescence  Excitation  Energy  
Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 27, 期号: 1-2, 页码: 21-25
Authors:  Chen CY;  Chen WD;  Song SF;  Xu ZJ;  Liao XB;  Li GH;  Bian LF;  Ding K;  Chen, CY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Si Clusters  
Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 9, 页码: 4930-4934
Authors:  Song SF;  Chen WD;  Zhang CG;  Bian LF;  Hsu CC;  Ma BS;  Li GH;  Zhu JJ;  Song, SF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sfsong@red.semi.ac.cn
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Doped Gan