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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
Authors:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
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Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals 期刊论文
Journal of Crystal Growth, 2019, 卷号: 526, 页码: 125237
Authors:  Jing Sun ;   Guiying Shen ;   Hui Xie ;   Jingming Liu ;   Ding Yu ;   Youwen Zhao
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VGF growth of high quality InAs single crystals with low dislocation density 期刊论文
Journal of Crystal Growth, 2019, 卷号: 531, 页码: 125350
Authors:  Jun Yang;  Wei Lu;  Manlong Duan;  Hui Xie;  Guiying Shen;  Jingmin Liu;  Zhiyuan Dong;  Youwen Zhao
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High quality GaN epitaxial growth on β -Ga 2 O 3 substrate enabled by self- assembled SiO 2 nanospheres 期刊论文
Journal of Crystal Growth, 2019, 卷号: 525, 页码: 125211
Authors:  Xiang Zhang ;   Tongbo Wei ;   Kuankuan Ren ;  Zhuo Xiong ;   Weijiang Li ;   Chao Yang ;   Liang Zhang ;   Junxi Wang
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Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy 期刊论文
Journal of Crystal Growth, 2018, 卷号: 492, 页码: 29-34
Authors:  Jun Zheng;  Zhi Liu;  Yongwang Zhang;  Yuhua Zuo;  Chuanbo Li;  Chunlai Xue;  Buwen Cheng;  Qiming Wang
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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers 期刊论文
Journal of Crystal Growth, 2018, 卷号: 488, 页码: 8–15
Authors:  Haining Chong ;   Zhewei Wang ;   Chaonan Chen ;   Zemin Xu ;   Ke Wu ;   Lan Wu ;   Bo Xu ;   Hui Ye
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Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes 期刊论文
Journal of Crystal Growth, 2018, 卷号: 482, 页码: 70-74
Authors:  Yuexi Lyu;  Xi Han;  Yaoyao Sun;  Zhi Jiang;  Chunyan Guo;  Wei Xiang;  Yinan Dong;  Jie Cui;  Yuan Yao;  Dongwei Jiang;  Guowei Wang;  Yingqiang Xu;  Zhichuan Niu
Adobe PDF(1177Kb)  |  Favorite  |  View/Download:55/0  |  Submit date:2019/09/22