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Structural discontinuity induced surface second harmonic generation in single; thin zinc-blende GaAs nanowires 期刊论文
Nanoscale, 2017, 卷号: 9, 页码: 16066–16072
Authors:  Yu-Ming Wei;  Ying Yu;  Jing Wang;  Lin Liu;  Hai-Qiao Ni;  Zhi-Chuan Niu;  Jun-Tao Li;  Xue-Hua Wang;  Si-Yuan Yu
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High-efficiency broadband second harmonic generation in single hexagonal GaAs nanowire 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 2166
Authors:  Jing Wang;  Ying Yu;  Yu-Ming Wei;  Shun-Fa Liu;  Juntao Li;  Zhang-Kai Zhou;  Zhi-Chuan Niu;  Si-Yuan Yu;  Xue-Hua Wang
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N-type GaSb single crystals with high below-band gap transmission 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107801
Authors:  Yong-Biao Bai;  You-Wen Zhao;  Gui-Ying Shen;  Xiao-Yu Chen;  Jing-Ming Liu;  Hui Xie;  Zhi-Yuan Dong;  Jun Yang;  Feng-Yun Yang and Feng-Hua Wang
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Thermally induced native defect transform in annealed GaSb 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 7, 页码: 077801
Authors:  Jie Su;  Tong Liu;  Jing-Ming Liu;  Jun Yang;  Yong-Biao Bai;  Gui-Ying Shen;  Zhi-Yuan Dong;  Fang-Fang Wang;  You-Wen Zhao
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C H complex defects and their influence in ZnO single crystal 期刊论文
Chinese Physics B, 2015, 卷号: 24, 期号: 10, 页码: 107704
Authors:  Xie Hui;  Zhao You-Wen;  Liu Tong;  Dong Zhi-Yuan;  Yang Jun;  Liu Jing-Ming
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Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 9, 页码: 098801
Authors:  Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Huia
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半绝缘 InP 单晶衬底表面缺陷与杂质 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  刘京明
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应用BIGIS-4测序系统完成Glaciecola mesophila sp.nov.的全基因组测序和组装 期刊论文
中国科学. 生命科学, 2011, 卷号: 41, 期号: 7, 页码: 544-549
Authors:  袁丽娜;  任鲁风;  李运涛;  韩伟静;  俞勇;  楚亚男;  刘贵明;  于丹;  滕明静;  王亮;  王绪敏;  周晓光;  俞育德;  于军
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采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件 期刊论文
电子器件, 2005, 卷号: 28, 期号: 3, 页码: 479-481
Authors:  陈晓娟;  刘新宇;  和致经;  刘键;  邵刚;  魏珂;  吴德馨;  王晓亮;  周钧铭;  陈宏
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半导体激光器腔面钝化的方法 专利
专利类型: 发明, 申请日期: 2004-10-06, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘斌;  刘媛媛;  张敬明;  马骁宇
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