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Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 4, 页码: 045417
Authors:  Xiaodi Xue;   Laipan Zhu;   Wei Huang;   Xavier Marie;   Pierre Renucci;   Yu Liu;   Yang Zhang;   Xiaolin Zeng;   Jing Wu;   Bo Xu;   Zhanguo Wang;   Yonghai Chen;   Weifeng Zhang;   Yuan Lu
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Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文
Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153
Authors:  Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang
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Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文
Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951
Authors:  FENG LIANG ;   DEGANG ZHAO ;   DESHENG JIANG ;   ZONGSHUN LIU ;   JIANJUN ZHU ;   PING CHEN ;   JING YANG ;   LIQUN ZHANG
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The Fabrication of Micro/Nano Structures by Laser Machining 期刊论文
Nanomaterials, 2019, 卷号: 9, 页码: 1789
Authors:  Liangliang Yang;   Jiangtao Wei ;   Zhe Ma ;   Peishuai Song;   Jing Ma ;   Yongqiang Zhao;   Zhen Huang ;   Mingliang Zhang ;   Fuhua Yang ;   Xiaodong Wang
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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang
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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells 期刊论文
Chinese Physics Letters, 2019, 卷号: 36, 期号: 7, 页码: 077201
Authors:  Xiao-di Xue ;   Yu Liu ;   Lai-pan Zhu ;   Wei Huang ;   Yang Zhang ;   Xiao-lin Zeng ;   Jing Wu ;   Bo Xu ;   Zhan-guo Wang ;   Yong-hai Chen ;   Wei-feng Zhang
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The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文
IEEE Access, 2019, 卷号: 7, 页码: 102710-102716
Authors:  Jing Zhang;  Hongliang Lv;  Yifeng Song;  Haiqiao Ni;  Zhichuan Niu;  Yuming Zhang;   Senior Member, IEEE
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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
Authors:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
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Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 118102
Authors:  Jing Zhang;  Hong-Liang Lv;  Hai-Qiao Ni;  Shi-Zheng Yang;  Xiao-Ran Cui;  Zhi-Chuan Niu;  Yi-Men Zhang and Yu-Ming Zhang
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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-µm quantum dot lasers 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 7, 页码: 078104
Authors:  Hui-Ming Hao;  Xiang-Bin Su;  Jing Zhang;  Hai-Qiao Ni;  Zhi-Chuan Niu
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