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纳秒激光诱导金属表面功能性微纳结构研究 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  付金祥
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纳秒激光  微纳结构  陷光结构  润湿特性  结构色  
Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors 期刊论文
Journal of Applied Physics, 2016, 卷号: 119, 期号: 10, 页码: 105304
Authors:  Y. F. Lao;  A. G. U. Perera;  H. L. Wang;  J. H. Zhao;  Y. J. Jin;  D. H. Zhang
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Organic-inorganic perovskite plasmonic nanowire lasers with a low threshold and a good thermal stability 期刊论文
Nanoscale, 2016, 卷号: 8, 期号: 47, 页码: 19536–19540
Authors:  Haichao Yu;  Kuankuan Ren;  Qiang Wu;  Jian Wang;  Jie Lin;  Zhijie Wang;  Jingjun Xu;  Rupert F. Oulton;  Shengchun Qu;  Peng Jin
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半导体低维波导结构中自旋输运的理论研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  孙金芳
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Hierarchical carbon nanotube membrane with high packing density and tunable porous structure for high voltage supercapacitors 期刊论文
CARBON, 2012, 卷号: 50, 期号: 14, 页码: 5167-5175
Authors:  Zheng C (Zheng, Chao);  Qian WZ (Qian, Weizhong);  Cui CJ (Cui, Chaojie);  Zhang Q (Zhang, Qiang);  Jin YG (Jin, Yuguang);  Zhao MQ (Zhao, Mengqiang);  Tan PH (Tan, Pinghen);  Wei F (Wei, Fei)
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Femtosecond laser lithography technique for submicron T-gate fabrication on positive photoresist 期刊论文
OPTICAL ENGINEERING, 2012, 卷号: 51, 期号: 5, 页码: 54303
Authors:  Du, YD;  Han, WH;  Yan, W;  Xu, XN;  Zhang, YB;  Wang, XD;  Yang, FH;  Cao, HZ;  Jin, F;  Dong, XZ;  Zhao, ZS;  Duan, XM;  Liu, Y
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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 11, 页码: 113509
Authors:  Shi K (Shi K.);  Zhang PF (Zhang P. F.);  Wei HY (Wei H. Y.);  Jiao CM (Jiao C. M.);  Jin P (Jin P.);  Liu XL (Liu X. L.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.)
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激光直写技术在微电极阵列制作中的应用研究 期刊论文
高技术通讯, 2011, 卷号: 21, 期号: 2, 页码: 210-214
Authors:  陈海峰;  曹宇;  李祥友;  蔡志祥;  王小宝;  王少飞;  李金洪;  曾晓雁;  陈弘达
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T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 页码: 1-5
Authors:  Du, Y.D.;  Cao, H.Z.;  Yan, W.;  Han, W.H.;  Liu, Y.;  Dong, X.Z.;  Zhang, Y.B.;  Jin, F.;  Zhao, Z.S.;  Yang, F.H.;  Duan, X.M.;  Han, W.H.(weihua@semi.ac.cn)
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Ablation  Drain Current  Fabrication  Gallium Nitride  High Electron Mobility Transistors  Photoresists  Ultrashort Pulses  
适用于激光共聚焦测量装置的光学窗口片 专利
专利类型: 实用新型, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  杨晋玲;  周美强;  周 威;  唐龙娟;  朱银芳;  杨富华
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