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Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes 期刊论文
Journal of Crystal Growth, 2018, 卷号: 482, 页码: 70-74
Authors:  Yuexi Lyu;  Xi Han;  Yaoyao Sun;  Zhi Jiang;  Chunyan Guo;  Wei Xiang;  Yinan Dong;  Jie Cui;  Yuan Yao;  Dongwei Jiang;  Guowei Wang;  Yingqiang Xu;  Zhichuan Niu
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Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes 期刊论文
Journal of Crystal Growth, 2017, 卷号: 482, 页码: 70–74
Authors:  Yuexi Lyu;  Xi Han;  Yaoyao Sun;  Zhi Jiang;  Chunyan Guo;  Wei Xiang;  Yinan Dong;  Jie Cui;  Yuan Yao;  Dongwei Jiang;  Guowei Wang;  Yingqiang Xu
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Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 076105
Authors:  Xiao-Meng Zhao;  Yang Zhang;  Li-Jie Cui;  Min Guan;  Bao-Qiang Wang;  Zhan-Ping Zhu;  Yi-Ping Zeng
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The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 6, 页码: 068402
Authors:  LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen, JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun
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High sensitivity Hall devices with AlSb InAs quantum well structures 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 5, 页码: 7106
Authors:  Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping
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Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Authors:  Zhao J (Zhao Jie);  Zeng YP (Zeng Yiping);  Liu C (Liu Chao);  Cui LJ (Cui Lijie);  Li YB (Li Yanbo);  Zhao, J, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, QingHua E Rd, Beijing 100083, Peoples R China. E-mail Address: jiezhao@semi.ac.cn
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Znte  Molecular Beam Epitaxy  Reflection High-energy Electron Diffraction  X-ray Diffraction  Atomic Force Microscopy  Vapor-phase Epitaxy  N-type Znte  Mbe Growth  100 Gaas  Znse  Layers  Surface  Temperature  Substrate  Epilayers  
In0.53Ga0.47As/In0.52Al0.48As量子阱二维电子气的零场自旋分裂 期刊论文
广西大学学报. 自然科学版, 2010, 卷号: 35, 期号: 6, 页码: 1027-1031
Authors:  周文政;  代娴;  林铁;  商丽燕;  崔利杰;  曾一平;  褚君浩
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小孔径蝴蝶型光电导天线太赫兹辐射源的研究 期刊论文
激光与红外, 2009, 卷号: 39, 期号: 2, 页码: 183-186
Authors:  黄振;  于斌;  赵国忠;  张存林;  崔利杰;  曾一平
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砷化镓衬底上的多层变形缓冲层的制作方法 专利
专利类型: 发明, 申请日期: 2008-06-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高宏玲;  曾一平;  段瑞飞;  王宝强;  朱战平;  崔利杰
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两个子带占据的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中填充因子的变化规律 期刊论文
物理学报, 2008, 卷号: 57, 期号: 6, 页码: 3818-3822
Authors:  商丽燕;  林铁;  周文政;  郭少令;  李东临;  高宏玲;  崔利杰;  曾一平;  褚君浩
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