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Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 2, 页码: 021120
Authors:  Chen, ZH;  Jiang, XW;  Dong, S;  Li, JB;  Li, SS;  Wang, LW
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Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 2, 页码: 023512
Authors:  Jiang, XW;  Gong, J;  Xu, N;  Li, SS;  Zhang, JF;  Hao, Y;  Wang, LW
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Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 19, 页码: 193510
Authors:  Jiang, XW;  Li, SS
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An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 12, 页码: 123504
Authors:  Wang, Z;  Jiang, XW;  Li, SS;  Wang, LW
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A comparative study for quantum transport calculations of nanosized field-effect transistors 期刊论文
SOLID-STATE ELECTRONICS, 2012, 卷号: 68, 页码: 56-62
Authors:  Jiang, XW;  Li, SS;  Wang, LW
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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 2, 页码: 27304
Authors:  Jiang, XW;  Li, SS
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Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 5, 页码: Article no.54503
Authors:  Jiang XW;  Li SS;  Xia JB;  Wang LW;  Jiang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Field-effect Transistors  Semiconductor-devices  Silicon Devices  Monte-carlo  Mosfets  Nanotransistors  Approximation  Equations  Design  Models  
SiO2基Mach-Zehnder型传感芯片的制备与敏感性研究 期刊论文
光电子·激光, 2011, 卷号: 22, 期号: 2, 页码: 159-162
Authors:  吴远大;  姜婷;  安俊明;  李建光;  王玥;  王红杰;  胡雄伟
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Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas 期刊论文
PHYSICAL REVIEW B, 2011, 卷号: 84, 期号: 7, 页码: 75341
Authors:  Peng XY;  Zhang Q;  Shen B;  Shi JR;  Yin CM;  He XW;  Xu FJ;  Wang XQ;  Tang N;  Jiang CY;  Chen YH;  Chang K;  Peng, XY (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.;
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Photomagnetism  Metals  
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 057101
Authors:  Deng HX (Deng Hui-Xiong);  Jiang XW (Jiang Xiang-Wei);  Tang LM (Tang Li-Ming);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Simulation  Transistors  Limit  Nm