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Enhancing light emission efficiency without color change in post-transition metal chalcogenides 期刊论文
Nanoscale., 2016, 卷号: 8, 期号: 11, 页码: 5820-5825
Authors:  Cong Wang;  Shengxue Yang;  Hui Cai;  Can Ataca;  Hui Chen;  Xinzheng Zhang;  Jingjun Xu;  Bin Chen;  Kedi Wu;  Haoran Zhang;  Luqi Liu;  Jingbo Li;  Jeffrey C. Grossman;  Sefaattin Tongay;  Qian Liu
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Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions 期刊论文
Phys. Chem. Chem. Phys., 2016, 卷号: 18, 期号: 40, 页码: 27750-27753
Authors:  Cong Wang;  Shengxue Yang;  Wenqi Xiong;  Congxin Xia;  Hui Cai;  Bin Chen;  Xiaoting Wang;  Xinzheng Zhang;  Zhongming Wei;  Sefaattin Tongay;  Jingbo Li;  Qian Liu
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Enhancing light emission efficiency without color change in post-transition metal chalcogenides 期刊论文
Nanoscale., 2016, 卷号: 8, 期号: 11, 页码: 5820-5825
Authors:  Cong Wang;  Shengxue Yang;  Hui Cai;  Can Ataca;  Hui Chen;  Xinzheng Zhang;  Jingjun Xu;  Bin Chen;  Kedi Wu;  Haoran Zhang;  Luqi Liu;  Jingbo Li;  Jeffrey C. Grossman;  Sefaattin Tongay;  Qian Liu
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Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Authors:  Wang JF (Wang Jian-Feng);  Zhang BS (Zhang Bao-Shun);  Zhang JC (Zhang Ji-Cai);  Zhu JJ (Zhu Jian-Jun);  Wang YT (Wang Yu-Tian);  Chen J (Chen Jun);  Liu W (Liu Wei);  Jiang DS (Jiang De-Sheng);  Yao DZ (Yao Duan-Zheng);  Yang H (Yang Hui);  Wang, JF, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. E-mail: wlino@semi.ac.cn
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Chemical-vapor-deposition  High-quality Gan  Aln Buffer Layer  Nucleation Layer  Phase Epitaxy  Evolution  Density  Silicon  Stress  Si  
p型GaN的掺杂研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 3, 页码: 508-512
Authors:  金瑞琴;  朱建军;  赵德刚;  刘建平;  张纪才;  杨辉
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GaN生长速率的研究 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 726-729
Authors:  金瑞琴;  赵德刚;  刘建平;  张纪才;  杨辉
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多层InAs量子点的光致发光研究 期刊论文
半导体光电, 2005, 卷号: 26, 期号: 6, 页码: 519-522
Authors:  孔令民;  蔡加法;  陈厦平;  朱会丽;  吴正云;  牛智川
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In源流量与Ⅲ族流量之比对InGaN/GaN多量子阱性质的影响 期刊论文
物理学报, 2004, 卷号: 53, 期号: 8, 页码: 2467-2471
Authors:  张纪才;  王建峰;  王玉田;  杨辉
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单晶硅中氢与辐照缺陷的相互作用 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 1, 页码: 43-48
Authors:  王启元;  林兰英;  王建华;  邓惠芳;  谭利文;  王俊;  蔡田海;  郁元桓
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CMOS集成电路用Φ150-200mm外延硅材料 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 12, 页码: 1538
Authors:  王启元;  林兰英;  何自强;  龚义元;  蔡田海;  郁元桓;  何龙珠;  高秀峰;  王建华;  邓惠芳
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