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Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.48102
Authors:  Wei M;  Wang XL;  Xiao HL;  Wang CM;  Pan X;  Hou QF;  Wang ZG;  Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn
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Electron-mobility Transistors  Al-content  Stress-control  Phase Epitaxy  Algan  Buffer  Layers  Heterostructures  Interlayers  Silicon  
MOCVD生长GaN中与缺陷相关的现象研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  侯奇峰
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An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: Art. No. 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2011, 卷号: 406, 期号: 1, 页码: 73-76
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
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Efficiency  Quantum Dot  Gan  Efficiency  
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 2, 页码: Article no.28402
Authors:  Zhang XB;  Wang XL;  Xiao HL;  Yang CB;  Hou QF;  Yin HB;  Chen H;  Wang ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com
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Ingan  Solar Cell  Multiple Quantum Wells  In1-xgaxn Alloys  Band-gap  Inn  
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: Article no.18401
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Bi Y;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
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Efficiency  
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 55, 期号: 3, 页码: 30104
Authors:  Lin DF;  Wang XL;  Xiao HL;  Wang CM;  Jiang LJ;  Feng C;  Chen H;  Hou QF;  Deng QW;  Bi Y;  Kang H;  Lin, DF (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. dflin@semi.ac.cn
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Gan  
Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 10, 页码: 103003-1-103003-5
Authors:  Deng Qingwen;  Wang Xiaoliang;  Xiao Hongling;  Ma Zeyu;  Zhang Xiaobin;  Hou Qifeng;  Li Jinmin;  Wang Zhanguo
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Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 15, 页码: Art. No. 155403
Authors:  Gai YQ;  Li JB;  Hou QF;  Wang XL;  Xiao HL;  Wang CM;  Li JM;  Li JB Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jbli@semi.ac.cn
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N-type Gan  Electron-mobility Transistors  Vapor-phase Epitaxy  Defects  Thermoluminescence  Carbon  Trap  
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335
Authors:  Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG;  Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn
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Algan/aln/gan  Hemt  Mocvd  Sic Substrate  Power Device