SEMI OpenIR

Browse/Search Results:  1-1 of 1 Help

Selected(0)Clear Items/Page:    Sort:
Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 118102
Authors:  Jing Zhang;  Hong-Liang Lv;  Hai-Qiao Ni;  Shi-Zheng Yang;  Xiao-Ran Cui;  Zhi-Chuan Niu;  Yi-Men Zhang and Yu-Ming Zhang
Adobe PDF(2387Kb)  |  Favorite  |  View/Download:21/0  |  Submit date:2020/07/30