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Boron implanted emitter for n-type silicon solar cell 期刊论文
Chin. Phys. B, 2015, 卷号: 24, 期号: 3, 页码: 038801
Authors:  Liang Peng;  Han Pei-De;  Fan Yu-Jie;  Xing Yu-Peng
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Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 097101
Authors:  Mao X (Mao Xue);  Han PD (Han Pei-De);  Hu SX (Hu Shao-Xu);  Gao LP (Gao Li-Peng);  Li XY (Li Xin-Yi);  Mi YH (Mi Yan-Hong);  Liang P (Liang Peng)
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Investigation on deep energy levels formed by sulphur implantation into silicon 期刊论文
Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2012, 卷号: 41, 期号: SUPPL. 1, 页码: 372-375
Authors:  Gao, Li-Peng;  Han, Pei-De;  Mao, Xue;  Fan, Yu-Jie;  Hu, Shao-Xu
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Optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes 期刊论文
OPTICS COMMUNICATIONS, 2007, 卷号: 270, 期号: 2, 页码: 203-206
Authors:  Quan, YJ (Quan, Yu-Jun);  Han, PD (Han, Pei-De);  Lu, XD (Lu, Xiao-Dong);  Ye, ZC (Ye, Zhi-Cheng);  Wu, L (Wu, Li);  Quan, YJ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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Optical Interleaver  
采用宽脉冲激光器光源扫描辐照制作黑硅材料的方法 专利
专利类型: 发明, 专利号: CN200910078864.4, 公开日期: 2011-08-31
Inventors:  梁松;  朱洪亮;  林学春;  韩培德;  王宝华
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一种制作黑硅材料的方法 专利
专利类型: 发明, 专利号: CN200910078865.9, 公开日期: 2011-08-31
Inventors:  朱洪亮;  梁松;  韩培德;  林学春;  王宝华
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一种基于黑硅材料非制冷热红外探测器的制备方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  韩培德;  李辛毅;  毛雪;  胡少旭;  王帅;  范玉杰
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提高太阳能电池效率及制备高效率太阳能电池的方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  韩培德;  邢宇鹏;  范玉杰;  梁鹏
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一种非制冷热电偶红外探测器及其制备方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  李辛毅;  韩培德;  毛雪;  胡少旭;  王帅;  范玉杰
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一种基于超快激光掺杂的中间带材料的制备方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  李辛毅;  韩培德;  毛雪;  胡少旭;  王帅;  范玉杰
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