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Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
Authors:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
The ICP etching technology of 3C-SiC films 会议论文
INTERNATIONAL MEMS CONFERENCE 2006, 34: 511-515 2006, Singapore, SINGAPORE, MAY 09-12, 2006
Authors:  Ning J (Ning Jin);  Gong QC (Gong Quancheng);  Sun GS (Sun Guosheng);  Liu ZL (Liu Zhongli)
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无权访问的条目 期刊论文
Authors:  SUN Guosheng;  WANG Lei;  GONG Quancheng;  GAO Xin;  LIU Xingfang;  ZENG Yiping;  LI JinminL
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无权访问的条目 期刊论文
Authors:  SUN Guosheng;  NING Jin;  GAO Xin;  GONG Quancheng;  WANG Lei;  LIU Xingfang;  ZENG Yiping;  LI Jinmin
Adobe PDF(200Kb)  |  Favorite  |  View/Download:820/196  |  Submit date:2010/11/23