Browse/Search Results:  1-6 of 6 Help

Selected(0)Clear Items/Page:    Sort:
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 25, 页码: 252110
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Li ZC (Li, Z. C.);  Fan YM (Fan, Y. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.)
Adobe PDF(1055Kb)  |  Favorite  |  View/Download:1106/354  |  Submit date:2013/03/20
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 073111
Authors:  Ding Y (Ding Y.);  Fan WJ (Fan W. J.);  Ma BS (Ma B. S.);  Xu DW (Xu D. W.);  Yoon SF (Yoon S. F.);  Liang S (Liang S.);  Zhao LJ (Zhao L. J.);  Wasiak M (Wasiak M.);  Czyszanowski T (Czyszanowski T.);  Nakwaski W (Nakwaski W.);  Ding, Y, NanyangTechnolUniv, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址:
Adobe PDF(414Kb)  |  Favorite  |  View/Download:1100/429  |  Submit date:2010/11/14
Vapor-phase Epitaxy  Photovoltage Spectroscopy  Photoluminescence  Modes  
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Authors:  Liu JM (Liu J. M.);  Liu XL (Liu X. L.);  Xu XQ (Xu X. Q.);  Wang J (Wang J.);  Li CM (Li C. M.);  Wei HY (Wei H. Y.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Fan YM (Fan Y. M.);  Zhang XW (Zhang X. W.);  Wang ZG (Wang Z. G.)
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1238/348  |  Submit date:2010/08/17
Valence Band Offset  W-inn/h-bn Heterojunction  X-ray Photoelectron Spectroscopy  Conduction Band Offset  Valence Band Offset  Negative Electron-affinity  Indium Nitride  Wurtzite Gan  Surface  Film  Aln  Transport  Emission  Naxwo3  Growth  
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
DIAMOND AND RELATED MATERIALS, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Authors:  Ying J (Ying J.);  Zhang XW (Zhang X. W.);  Fan YM (Fan Y. M.);  Tan HR (Tan H. R.);  Yin ZG (Yin Z. G.);  Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(830Kb)  |  Favorite  |  View/Download:1280/332  |  Submit date:2010/12/28
Cubic Boron Nitride  Doping  Ion Beam Assisted depositIon  X-ray Photoelectron Spectroscopy  Ray Photoelectron-spectroscopy  Vapor-deposition  Si  Nucleation  Growth  
Mn掺杂GaN电子结构和光学性质研究 期刊论文
物理学报, 2008, 卷号: 57, 期号: 10, 页码: 6513-6519
Authors:  邢海英;  范广涵;  赵德刚;  何苗;  章勇;  周天明
Adobe PDF(437Kb)  |  Favorite  |  View/Download:1072/390  |  Submit date:2010/11/23
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Authors:  Zhang PF (Zhang, P. F.);  Liu XL (Liu, X. L.);  Wei HY (Wei, H. Y.);  Fan HB (Fan, H. B.);  Liang ZM (Liang, Z. M.);  Jin P (Jin, P.);  Yang SY (Yang, S. Y.);  Jiao CM (Jiao, C. M.);  Zhu QS (Zhu, Q. S.);  Wang ZG (Wang, Z. G.);  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
Adobe PDF(500Kb)  |  Favorite  |  View/Download:999/319  |  Submit date:2010/03/29