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Electron irradiation induced defects in high temperature annealed InP single crystal 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Authors:  Wang B (Wang Bo);  Zhao YW (Zhao You-Wen);  Dong ZY (Dong Zhi-Yuan);  Deng AH (Deng Ai-Hong);  Miao SS (Miao Shan-Shan);  Yang J (Yang Jun);  Zhao, YW, Sichuan Univ, Coll Phys Sci & Technol, Dept Appl Phys, Chengdu 610065, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Inp  
Effects of annealing ambient on the formation of compensation defects in InP 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 2, 页码: 930-932
Authors:  Deng AH;  Mascher P;  Zhao YW;  Lin LY;  Deng AH,Sichuan Univ,Dept Appl Phys,Sichuan 610065,Peoples R China.
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Undoped Semiinsulating Inp  Low Fe Content  Positron-lifetime  Phase Epitaxy  Pressure  Vacancy  Indium  Annihilation  Phosphide  Wafers