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High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028503
Authors:  Fa-Ran Chang ;   Rui-Ting Hao ;   Tong-Tong Qi ;   Qi-Chen Zhao ;   Xin-Xing Liu ;   Yong Li ;   Kang Gu ;   Jie Guo ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
Authors:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
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Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 118102
Authors:  Jing Zhang;  Hong-Liang Lv;  Hai-Qiao Ni;  Shi-Zheng Yang;  Xiao-Ran Cui;  Zhi-Chuan Niu;  Yi-Men Zhang and Yu-Ming Zhang
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High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 014208
Authors:  Sheng-Wen Xie ;   Yu Zhang ;   Cheng-Ao Yang ;   Shu-Shan Huang ;   Ye Yuan ;   Yi Zhang ;   Jin-Ming Shang ;   Fu-Hui Shao ;   Ying-Qiang Xu ;   Hai-Qiao Ni ;   Zhi-Chuan Niu
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Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 8, 页码: 087802
Authors:  Qi Wang ;   Guo-Dong Yuan ;   Wen-Qiang Liu ;   Shuai Zhao ;   Lu Zhang ;   Zhi-Qiang Liu ;   Jun-Xi Wang ;   Jin-Min Li
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High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 12, 页码: 128501
Authors:  Yue Zhao;  Nan Wang;  Kai Yu;  Xiaoming Zhang;  Xiuli Li;  Jun Zheng;  Chunlai Xue;  Buwen Cheng ;   Chuanbo Li
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Metal halide perovskite photodetectors: Material features and device engineering 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 018502
Authors:  Ye Wang;  Meng-Lei Gao;   Jin-Liang Wu;   Xing-Wang Zhang
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Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504
Authors:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
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Semiconductor–metal transition in GaAs nanowires under high pressure 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 7, 页码: 076401
Authors:  Yi-Lan Liang;  Zhen Yao;  Xue-Tong Yin;  Peng Wang;  Li-Xia Li;  Dong Pan;  Hai-Yan Li;  Quan-Jun Li;  Bing-Bing Liu and Jian-Hua Zhao
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Two-dimensional XSe2 (X= Mn, V) based magnetic tunneling junctions with high Curie temperature 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 10, 页码: 107504
Authors:  Longfei Pan;   Hongyu Wen;   Le Huang;   Long Chen;   Hui-Xiong Deng;   Jian-Bai Xia ;   Zhongming Wei
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