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Metal halide perovskite photodetectors: Material features and device engineering 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 018502
Authors:  Ye Wang;  Meng-Lei Gao;   Jin-Liang Wu;   Xing-Wang Zhang
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Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504
Authors:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
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Semiconductor–metal transition in GaAs nanowires under high pressure 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 7, 页码: 076401
Authors:  Yi-Lan Liang;  Zhen Yao;  Xue-Tong Yin;  Peng Wang;  Li-Xia Li;  Dong Pan;  Hai-Yan Li;  Quan-Jun Li;  Bing-Bing Liu and Jian-Hua Zhao
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Two-dimensional XSe2 (X= Mn, V) based magnetic tunneling junctions with high Curie temperature 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 10, 页码: 107504
Authors:  Longfei Pan;   Hongyu Wen;   Le Huang;   Long Chen;   Hui-Xiong Deng;   Jian-Bai Xia ;   Zhongming Wei
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High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3, 页码: 038504
Authors:  Zhi Jiang ;   Yao-Yao Sun ;   Chun-Yan Guo ;   Yue-Xi Lv ;   Hong-Yue Hao ;   Dong-Wei Jiang ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
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Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 5, 页码: 057102
Authors:  Ding Yu ;   Guiying Shen ;   Hui Xie ;   Jingming Liu ;   Jing Sun ;   Youwen Zhao
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Current diffusion and efficiency droop in vertical light emitting diodes 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 017203
Authors:  R Q Wan ;   T Li ;   Z Q Liu ;   X Y Yi ;   J X Wang ;   J H Li ;   W H Zhu ;   J M Li ;   L C Wang
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Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 10, 页码: 107303
Authors:  Yang-Yan Guo;  Wei-Hua Han;  Xiao-Song Zhao;  Ya-Mei Dou;  Xiao-Di Zhang;  Xin-Yu Wu ;   Fu-Hua Yang
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Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 066804
Authors:  Ya-Mei Dou ;   Wei-Hua Han ;   Yang-Yan Guo ;   Xiao-Song Zhao ;   Xiao-Di Zhang ;   Xin-Yu Wu ;   Fu-Hua Yang
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Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 10, 页码: 104209
Authors:  Li-Fei Tian;  Ying-Xin Kuang;  Zhong-Chao Fan;   Zhi-Yong Li
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