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| 4H-SiC基AlN栅介质原子层沉积生长研究 学位论文 , 中国科学院半导体研究所: 中国科学院大学, 2019 Authors: 陈俊
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| Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文 Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287 Authors: X.F. Liu ; G.G. Yan ; Z.W. Shen ; Z.X. Wen ; J. Chen ; Y.W. He ; W.S. Zhao ; L. Wang ; M. Guan ; F. Zhang ; G.S. Sun ; Y.P. Zeng
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| Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文 Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4 Authors: G.G. Yan ; X.F. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; X.H. Zhang ; X.G. Li ; G.S. Sun ; Y.P. Zeng ; Z.G. Wang
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| The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li
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| Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes 期刊论文 Applied Physics B, 2019, 卷号: 125, 页码: 235 Authors: J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing
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| Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer 期刊论文 Optics and Laser Technology, 2019, 卷号: 111, 页码: 810-813 Authors: J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li
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| Improving the performance of optical antenna for optical phased arrays through high- contrast grating structure on SOI substrate 期刊论文 Optics Express, 2019, 卷号: 27, 期号: 3, 页码: 2703-2712 Authors: P. F. WANG ; G. Z. LUO ; H. Y. YU ; Y. J. LI ; M. Q. WANG ; X. L. ZHOU ; W. X. CHEN; Y. J. ZHANG ; , J. Q. PAN
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| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40 Authors: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
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| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文 OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17 Authors: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
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| The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文 Optical Materials, 2018, 卷号: 86, 页码: 460-463 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
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