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Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate 期刊论文
Nanoscale, 2018, 卷号: 10, 期号: 13, 页码: 5888-5896
Authors:  Shaoteng Wu;   Liancheng Wang;   Zhiqiang Liu;   Xiaoyan Yi;   Yang Huang;   Chao Yang;   Tongbo Wei;   Jianchang Yan;   Guodong Yuan;   Junxi Wang ;   Jinmin Li
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The 8×10GHz Receiver Optical Subassembly Based on Silica Hybrid Integration Technology for Data Center Interconnection 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 10, 页码: 104202
Authors:  Chao-Yi Li;  Jun-Ming An;  Jiu-Qi Wang;  Liang-Liang Wang;  Jia-Shun Zhang;  Jian-Guang Li;  Yuan-Da Wu;  Yue Wang;  Xiao-Jie Yin;  Yong Li;  Fei Zhong
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Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 21, 页码: A1596-A1603
Authors:  Yu, Zhi-Guo;  Zhao, Li-Xia;  Wei, Xue-Cheng;  Lu, Hong-Xi;  Wang, Jun-Xi;  Zeng, Yi-Ping;  Li, Jin-Min;  Sun, Xue-Jiao;  An, Ping-Bo;  Zhu, Shi-Chao;  Liu, Lei;  Tian, Li-Xin;  Zhang, Feng
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Tunable Fano Resonance in E-Shape Plasmonic Nanocavities 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 卷号: 118, 期号: 43, 页码: 25124-25131
Authors:  Sun, Bo;  Zhao, Lixia;  Wang, Chao;  Yi, Xiaoyan;  Liu, Zhiqiang;  Wang, Guohong;  Li, Jinmin
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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 131101
Authors:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi);  Yi XY (Yi, Xiaoyan);  Duan RF (Duan, Ruifei);  Wang JX (Wang, Junxi);  Zeng YP (Zeng, Yiping);  Li JM (Li, Jinmin);  Yang FH (Yang, Fuhua);  Wang C (Wang, Chao);  Zou G (Zou, Gang)
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锑化物HEMT器件研究进展 期刊论文
功能材料与器件学报, 2011, 卷号: 17, 期号: 1, 页码: 29-35
Authors:  李彦波;  刘超;  张杨;  曾一平
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Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展 期刊论文
半导体光电, 2011, 卷号: 32, 期号: 1, 页码: 1-5,14
Authors:  赵杰;  刘超;  李彦波;  曾一平
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锑化物超晶格红外探测器的研究进展 期刊论文
固体电子学研究与进展, 2010, 卷号: 30, 期号: 1, 页码: 40864
Authors:  李彦波;  刘超;  张杨;  赵杰;  曾一平
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用于氮化物外延生长的纳米级图形衬底的制作方法 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高海永;  樊中朝;  李晋闽;  曾一平;  王国宏;  张会肖;  王军喜;  张扬
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制备绝缘体上锗硅薄膜材料的方法 专利
专利类型: 发明, 申请日期: 2006-05-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘超;  高兴国;  李建平;  曾一平
Adobe PDF(370Kb)  |  Favorite  |  View/Download:794/176  |  Submit date:2009/06/11