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无权访问的条目 学位论文
Authors:  曹玉飞
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A high speed 1000 fps CMOS image sensor with low noise global shutter pixels 期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2014, 卷号: 57, 期号: 4, 页码: 042405
Authors:  Zhou, YF;  Cao, ZX;  Qin, Q;  Li, QL;  Shi, C;  Wu, NJ
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Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 7, 页码: 077203
Authors:  Cao, YF;  Cai, KM;  Li, LJ;  Lu, WJ;  Sun, YP;  Wang, KY
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Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2014, 卷号: 57, 期号: 8, 页码: 1471-1475
Authors:  Cao, YF;  Li, YY;  Wei, GN;  Ji, Y;  Wang, KY
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A scanning tunneling microscope capable of imaging specified micron-scale small samples 期刊论文
REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 卷号: 83, 期号: 12, 页码: 123701
Authors:  Tao W (Tao, Wei);  Cao YF (Cao, Yufei);  Wang HF (Wang, Huafeng);  Wang KY (Wang, Kaiyou);  Lu QY (Lu, Qingyou)
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Image Lag Optimization of Four-Transistor Pixel for High Speed CMOS Image 会议论文
Proceedings of SPIE 卷: 8194 文献号: 819435, Beijing, PEOPLES R CHINA, 2011
Authors:  Zhou YF (Zhou Yangfan);  Cao ZX (Cao Zhongxiang);  Li QL (Li Quanliang);  Qin Q (Qin Qi);  Wu NJ (Wu Nanjian)
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Ultrasensitive Detection of Infrared Photon Using Microcantilever: Theoretical Analysis 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 10, 页码: Art. No. 108501
Authors:  Cao LX (Cao Li-Xin);  Zhang FX (Zhang Feng-Xin);  Zhu YF (Zhu Yin-Fang);  Yang JL (Yang Jin-Ling);  Cao, LX, Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100190, Peoples R China. 电子邮箱地址:
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Sensitivity  Performance  Cantilevers  
红光铝镓铟磷半导体激光器光纤耦合模块的制备方法 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  徐云;  陈良惠;  张玉芳;  宋国峰;  李玉璋;  种明;  郑婉华;  曹青
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Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Authors:  Ng YF;  Cao YG;  Xie MH;  Wang XL;  Tong SY;  Xie MH,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China. 电子邮箱地址:
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Misfit Dislocations  Defects  Ingan  Gan  Reduction  Indium  Layers  Films  
LP-MOCVD制备AlGaInP高亮度橙横色发光二极管 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 9, 页码: 712
Authors:  王国宏;  马骁宇;  曹青;  张玉芳;  王树堂;  李玉璋;  陈良惠
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