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Metal halide perovskite photodetectors: Material features and device engineering 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 018502
Authors:  Ye Wang;  Meng-Lei Gao;   Jin-Liang Wu;   Xing-Wang Zhang
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Dual-Mode Microcavity Semiconductor Lasers 期刊论文
IEEE Journal of Selected Topics in Quantum Electronics, 2019, 卷号: 25, 期号: 6, 页码: 1501408
Authors:  Hai-Zhong Weng;   Yue-De Yang ;   Ji-Liang Wu;   You-Zeng Hao;   Min Tang;   Jin-Long Xiao ;   Yong-Zhen Huang ;   Senior Member,IEEE
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Low-phase-noise microwave generation using dual-mode microsquare laser phase locking by modulated sidebands 期刊论文
OPTICS LETTERS, 2018, 卷号: 43, 期号: 17, 页码: 4069-4072
Authors:  JUN -YUAN HAN ;   YONG -ZHEN HUANG ;   * YOU -ZENG HAO ;   JI -LIANG WU ;   FU -LI WANG ;   YUE -DE YANG ;   JIN -LONG XIAO
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Observation of Unusual Optical Band Structure of CH3NH3PbI3 Perovskite Single Crystal 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 4, 页码: 1583-1590
Authors:  Wei Huang;   Shizhong Yue;   Yu Liu;   Laipan Zhu;   Peng Jin;   Qing Wu;   Yang Zhang;   Yanan Chen;  Kong Liu;  Ping Liang;   Shengchun Qu;  Zhijie Wang;   Yonghai Chen
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InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration 期刊论文
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 4, 页码: 048102
Authors:  Li Xin-Kun;  Jin Peng;  Liang De-Chun;  Wu Ju;  Wang Zhan-Guo
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InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 4, 页码: 048102
Authors:  Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo
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InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm 期刊论文
Chinese Physics B, 2012, 卷号: 21, 期号: 2, 页码: 028102
Authors:  Li, Xin-Kun;  Liang, De-Chun;  Jin, Peng;  An, Qi;  Wei, Heng;  Wu, Jian;  Wang, Zhan-Guo
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InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 2, 页码: 28102
Authors:  Li, XK;  Liang, DC;  Jin, P;  An, Q;  Wei, H;  Wu, J;  Wang, ZG
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Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 10, 页码: 108503
Authors:  Liang, DC;  An, Q;  Jin, P;  Li, XK;  Wei, H;  Wu, J;  Wang, ZG;  Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn
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Inalgaas Quantum Dot  Superluminescent Diode  Optical Coherence Tomography  Short Wavelength  Optical Coherence Tomography  Resolution  
在锑化镓衬底上生长InAsxSb1-x薄膜的方法 专利
专利类型: 发明, 申请日期: 2009-06-24, 公开日期: 3998
Inventors:  高福宝;  陈诺夫;  吴金良;  刘 磊 
Adobe PDF(275Kb)  |  Favorite  |  View/Download:974/232  |  Submit date:2010/03/19