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| Wavelength-Tunable Chaotic Signal Generation With On-Chip O/E Conversion 期刊论文 IEEE Photonics Technology Letters, 2019, 卷号: 31, 期号: 14, 页码: 1179-1182 Authors: Guangcan Chen ; Wu Zhao ; Dan Lu ; Member; IEEE; Lu Guo ; Huan Wang; Daibing Zhou ; Yongguang Huang; Song Liang ; Lingjuan Zhao
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| Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices 期刊论文 Journal of Materials Science: Materials in Electronics, 2019, 卷号: 30, 期号: 4, 页码: 3277-3282 Authors: Gaoqiang Deng; Yuantao Zhang; Pengchong Li ; Ye Yu ; Xu Han ; Liang Chen ; Long Yan ; Xin Dong ; Degang Zhao; Guotong Du
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| Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文 Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153 Authors: Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang
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| The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li
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| Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文 Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280 Authors: Shuangtao Liu; Jing Yang; Degang Zhao; Desheng Jiang; Jianjun Zhu; Feng Liang; Ping Chen; Zongshun Liu; Yao Xing; Liyuan Peng
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| Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes 期刊论文 Applied Physics B, 2019, 卷号: 125, 页码: 235 Authors: J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing
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| Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer 期刊论文 Optics and Laser Technology, 2019, 卷号: 111, 页码: 810-813 Authors: J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li
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| Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文 Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951 Authors: FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG
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| Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文 NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88 Authors: Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang
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| 1.3-μm 4×25-Gb/s hybrid integrated TOSA and ROSA 期刊论文 Frontiers of Information Technology & Electronic Engineering, 2019, 卷号: 20, 期号: 4, 页码: 490–497 Authors: Yu Liu; Hao-tian Bao; Yi-ming Zhang; Zhi-ke Zhang; Yun-shan Zhang; Xiang-fei Chen; Jun Lu; Yue-chun Shi; Jia-shun Zhang; Liang-liang Wang; Jun-ming An ; Ning-hua Zhu
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