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一种氮化物薄膜外延生长的方法 专利
专利类型: 发明, 申请日期: 2009-06-03, 公开日期: 3996
Inventors:  闫发旺;  高海永;  张 扬;  张会肖;  李晋闽;  曾一平;  王国宏 
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用于氮化物外延生长的纳米级图形衬底的制作方法 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高海永;  樊中朝;  李晋闽;  曾一平;  王国宏;  张会肖;  王军喜;  张扬
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用于氮化物外延生长的图形蓝宝石衬底的制作方法 专利
专利类型: 发明, 申请日期: 2008-12-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高海永;  张扬;  李晋闽;  曾一平;  王国宏;  张会肖
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高晶体质量氮化物外延生长所用图形衬底的制备方法 专利
专利类型: 发明, 申请日期: 2008-10-29, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张扬;  闫发旺;  高海永;  曾一平;  王国宏;  张会肖;  李晋闽
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Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 2, 页码: Art.No.023506
Authors:  Yan FW (Yan Fawang);  Gao HY (Gao Haiyong);  Zhang HX (Zhang Huixiao);  Wang GH (Wang Guohong);  Yang FH (Yang Fuhua);  Yan JC (Yan Jianchang);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li, Jinmin);  Yan, FW, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China. 电子邮箱地址: fwyan@red.semi.ac.cn
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Gallium Nitride  
First and second order Raman scattering spectroscopy of nonpolar a-plane GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 10, 页码: Art.No.103533
Authors:  Gao HY (Gao Haiyong);  Yan FW (Yan Fawang);  Zhang HX (Zhang Huixiao);  Li JM (Li Jinmin);  Wang JX (Wang Junxi);  Yan JC (Yan Jianchang);  Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: hygao@semi.ac.cn
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Hexagonal Gan  
Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659
Authors:  Gao HY (Gao Haiyong);  Yan FW (Yan Fawang);  Li JM (Li Jinmin);  Zeng YP (Zeng Yiping);  Wang JX (Wang Junxi);  Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: hygao@red.semi.ac.cn
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Chemical-vapor-deposition  
Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 35, 期号: 1, 页码: 117-120
Authors:  Gao HY (Gao Haiyong);  Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China. E-mail: hygao@semi.ac.cn
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Gan Nanorods  Ga2o3/zno Films  Rf Magnetron Sputtering  Nitridation  Optical-properties  Laser-diodes  Zno  Substrate  Nanowires  Layer  
Synthesis of GaN nanorods with vertebra-like morphology 会议论文
2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Zhuhai, PEOPLES R CHINA, JAN 18-21, 2006
Authors:  Gao, HY (Gao, Haiyong);  Li, JM (Li, Jinmin);  Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.
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Gan Nanorods  Ga2o3/zno Films  Nitritding  Morphology  Chemical-vapor-deposition  Films  
Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 卷号: 203, 期号: 15, 页码: 3788-3792
Authors:  Gao, HY (Gao, Haiyong);  Yan, FW (Yan, Fawang);  Li, JM (Li, Jinmin);  Wang, JX (Wang, Junxi);  Yan, JC (Yan, Jianchang);  Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China. 电子邮箱地址: hygao@semi.ac.cn
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Time-resolved Photoluminescence