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Co 基Heusler 合金薄膜的超快磁光光谱研究 学位论文
, 北京: 中国科学院半导体研究所, 2016
Authors:  闫炜
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Multi-walled carbon nanotube as a saturable absorber for a passively mode-locked NdYVO4 laser 期刊论文
Laser Physics Letters, 2013, 卷号: 10, 期号: 5, 页码: 055805
Authors:  Xue Chun Lin, Ling Zhang, Yuen H Tsang, Yong Gang Wang, Hai Juan Yu, Shi Lian Yan, Wei Sun, Ying Ying Yang, Zehua Han and Wei Hou
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Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 6, 页码: 064005
Authors:  Yan, Wei;  Zhang, Renping;  Du, Yandong;  Han, Weihua;  Yang, Fuhua
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增强型AlGaN/GaN HEMT器件工艺的研究进展 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 771-777
Authors:  杜彦东;  韩伟华;  颜伟;  张严波;  熊莹;  张仁平;  杨富华
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Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Authors:  Zhang, Renping;  Yan, Wei;  Wang, Xiaoliang;  Yang, Fuhua;  Zhang, R.(zhangrenping@semi.ac.cn)
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Aspect Ratio  Current Density  Drain Current  Electric Network Analysis  Electric Network Analyzers  Electron Mobility  Fabrication  Gallium Nitride  Ohmic Contacts  Passivation  Silicon Nitride  Silicon Wafers  
三维半导体GaAs量子阱微腔中的腔极化激元 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1319-1323
Authors:  刘文楷;  林世鸣;  安艳伟;  张存善
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SiO2/SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法 专利
专利类型: 发明, 专利号: CN102437182A, 公开日期: 2012-09-07, 2012-05-02, 2012-09-07
Inventors:  杜彦东;  韩伟华;  颜伟;  张严波;  杨富华
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利用光子束超衍射技术制备半导体T型栅电极的方法 专利
专利类型: 发明, 专利号: CN102157361A, 公开日期: 2012-09-07, 2011-08-17, 2012-09-07
Inventors:  颜伟;  杜彦东;  韩伟华;  杨富华
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一种基于体硅材料的无结硅纳米线晶体管及其制备方法 专利
专利类型: 发明, 公开日期: 2013-02-06
Inventors:  李小明;  韩伟华;  张严波;  颜伟;  杜彦东;  陈燕坤;  杨富华
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具有低特征导通电阻的SiC VDMOSFET结构及其制造方法 专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:  王进泽;  杨香;  颜伟;  刘胜北;  赵继聪;  何志;  王晓东;  杨富华
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