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Resonant tunneling diode with a multiplication region for light detection 期刊论文
OPTICS COMMUNICATIONS, 2014, 卷号: 331, 页码: 94-97
Authors:  Dong, Yu;  Wang, Guanglong;  Ni, Haiqiao;  Chen, Jianhui;  Gao, Fengqi;  Qiao, Zhongtao;  Niu, Zhichuan
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GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications 期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 218
Authors:  Li, Jie;  Guo, Hao;  Liu, Jun;  Tang, Jun;  Ni, Haiqiao;  Shi, Yunbo;  Xue, Chenyang;  Niu, Zhichuan;  Zhang, Wendong;  Li, Mifeng;  Yu, Ying
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Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates 期刊论文
Russian Physics Journal, 2013, 卷号: 56, 期号: 1, 页码: 55-61
Authors:  Emelyanov, E. A.;  Kokhanenko, A. P.;  Pchelyakov, O. P.;  Loshkarev, I. D.;  Seleznev, V. A.;  Putyato, M. A.;  Semyagin, B. R.;  Preobrazhenskii, V. V.;  Niu, Zhicuan;  Ni, Haiqiao
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Electron spin dynamics study of bulk p-GaAs: The screening effect 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 1, 页码: 012406
Authors:  Zhao, Chunbo;  Yan, Tengfei;  Ni, Haiqiao;  Niu, Zhichuan;  Zhang, Xinhui
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Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 卷号: 113, 页码: 144-147
Authors:  Yang, Xiaoguang;  Wang, Kefan;  Gu, Yongxian;  Ni, Haiqiao;  Wang, Xiaodong;  Yang, Tao;  Wang, Zhanguo
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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文
MATERIALS, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926
Authors:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan);  Tang J (Tang, Jun);  Liu J (Liu, Jun);  Zhang WD (Zhang, Wendong);  He JF (He, Jifang);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
Authors:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying;  Ni, Haiqiao;  Xu, Yingqiang;  Niu, Zhichuan;  He, J.(hejifang@semi.ac.cn)
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Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells