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题名作者发表日期▼ 全文
First principles study of the electronic properties of twinned SiC nanowires [期刊论文]Wang ZG; Wang SJ; Zhang CL; Li JB2011
First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions [期刊论文]Wang ZG; Zhang CL; Li JB; Gao F; Weber WJ2010
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth [会议论文]Zhao C; Chen YH; Zhao M; Zhang CL; Xu B; Yu LK; Sun J; Lei W; Wang ZG2006
Influence of dislocation stress field on distribution of quantum dots [期刊论文]Zhang CL; Tang L; Wang YL; Wang ZG; Xu B2006
High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001) [期刊论文]Wang YL; Jin P; Ye XL; Zhang CL; Shi GX; Li RY; Chen YH; Wang ZG2006
A novel method for positioning of InAs islands on GaAs(110) [期刊论文]Cui CX; Chen YH; Zhang CL; Jin P; Shi GX; Zhao C; Xu B; Wang ZG2005
Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices [期刊论文]Zhang CL; Wang ZG; Chen YH; Cui CX; Xu B; Jin P; Li RY2005
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) [期刊论文]Zhao FA; Chen YH; Ye XL; Xu B; Jin P; Wu J; Wang ZG; Zhang CL2005
Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots [期刊论文]Zhang CL; Xu B; Wang ZG; Jin P; Zhao FA2005
Growth of nano-structures on composition-modulated InAlAs surfaces [期刊论文]Zhao FA; Chen YH; Ye XL; Jin P; Xu B; Wang ZG; Zhang CL2004

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