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题名作者发表日期▼ 全文
Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser [期刊论文]Xiang Li; Hong Wang; Zhongliang Qiao; Xin Guo; Geok Ing Ng; Yu Zhang; Zhichuan Niu; Cunzhu Tong; Chongyang Liu2017
New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode [期刊论文]Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Heng Long; Mo Li2017
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode [期刊论文]Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Heng Long; Jian Zhang2017
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells [期刊论文]Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang; Shuangtao Liu; Yao Xing; Heng Long; Mo Li2017
Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination [期刊论文]Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang; Shuangtao Liu; Yao Xing; Liqun Zhang; Mo Li; Jian Zhang2017
Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes [期刊论文]Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang; Ping Chen; Jian Jun Zhu; Zong Shun Liu; Jing Yang; Wei Liu; Shuang Tao Liu; Li Qun Zhang; Mo Li2017
Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact [期刊论文]Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shaungtao Liu; Yao Xing; Liqun Zhang; Mo Li; Jian Zhang2017
Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer [期刊论文]Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Hui Yang; Heng Long; Mo Li2017
Comparative study of the differential resistance of GaAs- and GaN-based laser diodes [期刊论文]Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang2016
Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure [期刊论文]Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li2016

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