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题名作者发表日期▼ 全文
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer [期刊论文]Pan X; Wei M; Yang CB; Xiao HL; Wang CM; Wang XL2011
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition [期刊论文]Wei M; Wang XL; Xiao HL; Wang CM; Pan X; Hou QF; Wang ZG2011
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates [期刊论文]Wei M; Wang XL; Pan X; Xiao HL; Wang CM; Yang CB; Wang ZG2011
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application [期刊论文]Wang XL; Chen TS; Xiao HL; Tang J; Ran JX; Zhang ML; Feng C; Hou QF; Wei M; Jiang LJ; Li JM; Wang ZG2009
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD [会议论文]Tang J; Wang XL; Chen TS; Xiao HL; Ran JX; Zhang ML; Hu GX; Feng C; Hou QF; Wei M; Li JM; Wang ZG2008
THE STUDY OF MICROSTRUCTURE IN IRON-DOPED AND SULFUR-DOPED INP CRYSTALS BY MEANS OF HREM AND COMPUTER-SIMULATION [期刊论文]WANG LC; LI Q; YU SD; ZHENG JG; WEI M; FENG D; CHU YM1991

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