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题名作者发表日期▼ 全文
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate [会议论文]Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo)2011
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer [会议论文]Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang)2011
Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell [期刊论文]Deng Qingwen; Wang Xiaoliang; Xiao Hongling; Ma Zeyu; Zhang Xiaobin; Hou Qifeng; Li Jinmin; Wang Zhanguo2010
A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design [期刊论文]Chen Zhigang; Zhang Yang; Luo Weijun; Zhang Renping; Yang Fuhua; Wang Xiaoliang; Li Jinmin2008
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE [期刊论文]Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin)2007
Structure optimization of field-plate AlGaN/GaN HEMTs [期刊论文]Luo WJ (Luo Weijun); Wei K (Wei Ke); Chen XJ (Chen Xiaojuan); Li CZ (Li Chengzhan); Liu XY (Liu Xinyu); Wang XL (Wang Xiaoliang)2007
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD [期刊论文]Ran JX (Ran Junxue); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Li JP (Li Jianping); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zhanguo)2007
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD [期刊论文]Liu Z (Liu Zhe); Wang XL (Wang Xiaoliang); Wang JX (Wang Junxi); Hu GX (Hu Guoxin); Guo LC (Guo Lunchun); Li JP (Li Jianping); Li JM (Li Jinmin); Zeng YP (Zeng Yiping)2007
The influence of internal electric fields on the transition energy of InGaN/gaN quantum well [期刊论文]Guo LC (Guo Lunchun); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Wang BZ (Wang Baozhu)2007
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate [期刊论文]Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)2007

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